DataSheet.es    


PDF MBM200GS6AW Data sheet ( Hoja de datos )

Número de pieza MBM200GS6AW
Descripción IGBT POWER MODULE
Fabricantes Hitachi 
Logotipo Hitachi Logotipo



Hay una vista previa y un enlace de descarga de MBM200GS6AW (archivo pdf) en la parte inferior de esta página.


Total 4 Páginas

No Preview Available ! MBM200GS6AW Hoja de datos, Descripción, Manual

IGBT MODULE
MBM200GS6AW
Silicon N-channel IGBT
OUTLINE DRAWING
FEATURES
* High speed and low saturation voltage.
* low noise due to built-in free-wheeling
diode - ultra soft fast recovery diode(USFD).
* Isolated head sink (terminal to base).
3-M5
2-φ5.6
94
80
16 16 16
E2
C1
G2
E2
C2E1
23
E1
G1
23
39.5
φ0.8
Unit in mm
4-Fast-on
Terminal
#110
ABSOLUTE MAXIMUM RATINGS (Tc=25°C )
Item
Symbol
Collector Emitter Voltage
Gate Emitter Voltage
Collector Current
DC
Forward Current
1ms
DC
1ms
Collector Power Dissipation
Junction Temperature
Storage Temperature
Isolation Voltage
Screw Torque
Terminals
Mounting
VCES
VGES
IC
ICp
IF
IFM
Pc
Tj
Tstg
VISO
-
-
Notes:(1)RMS Current of Diode 60Arms max.
(2)(3)Recommended Value 1.67N.m(17kgf.cm)
Weight: 200 (g)
Unit
V
V
A
A
W
°C
°C
VRMS
N.m
(kgf.cm)
C2E1
E2
G2
E2
C1
TERMINALS
E1
G1
MBM200GS6AW
600
±20
200
400
200
400
600
-40 ~ +150
-40 ~ +125
2,500(AC 1 minute)
1.96(20)
1.96(20)
(1)
(2)
(3)
CHARACTERISTICS (Tc=25°C )
Item
Collector Emitter Cut-Off Current
Symbol Unit Min. Typ. Max.
Test Conditions
I CES
mA
-
- 1.0 VCE=600V,VGE=0V
Gate Emitter Leakage Current
IGES
nA
-
- ±500 VGE=±20V,VCE=0V
Collector Emitter Saturation Voltage
Gate Emitter Threshold Voltage
Input Capacitance
Rise Time
Switching Times Turn On Time
Fall Time
VCE(sat)
VGE(TO)
Cies
tr
ton
tf
V
V
pF
ms
- 1.9 2.5 IC=200A,VGE=15V
- - 10 VCE=5V, IC =200mA
- 9,700 - VCE=10V,VGE=0V,f=1MHz
- 0.2 0.4 VCC=300V
- 0.3 0.6 RL=1.5W
- 0.25 0.35 RG=12W
(4)
Turn Off Time
toff
- 0.6 0.9 VGE=±15V
Peak Forward Voltage Drop
VFM V - 2.2 3.0 IF=200A,VGE=0V
Reverse Recovery Time
Thermal Impedance IGBT
FWD
trr
Rth(j-c)
Rth(j-c)
ms
°C/W
-
-
-
- 0.3 IF=200A,VGE=-10V, di/dt=200A/ms
- 0.21
Junction to case
- 0.5
Notes:(4) RG value is the test condition’s value for decision of the switching times, not recommended value.
Determine the suitable RG value after the measurement of switching waveforms
(overshoot voltage,etc.)with appliance mounted.
PDE-M200GS6AW-0

1 page





PáginasTotal 4 Páginas
PDF Descargar[ Datasheet MBM200GS6AW.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
MBM200GS6AWIGBT POWER MODULEHitachi
Hitachi

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar