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Número de pieza | MBM200GR12 | |
Descripción | IGBT POWER MODULE | |
Fabricantes | Hitachi | |
Logotipo | ||
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No Preview Available ! Hitachi IGBT Module / Silicon N-Channel IGBT
MBM200GR12
[Rated 200A/1200V, Dual-pack type]
FEATURES
· Low saturation voltage and high speed.
· Low turn-OFF switching loss.
· Low noise due to build-in free-wheeling diode.
(Ultra Soft and Fast recovery Diode (USFD))
· High reliability structure.
· Isolated heat sink (terminals to base).
CIRCUIT DIAGRAM
C2E1
E2
G2
E2
C1
E1
G1
Spec. No. IGBT-SP-99024(R1)
OUTLINE DRAWING
2- φ 5.6
92
80
19 20 18.5
Unit in mm
4-Fast-on
Terminal #110
3-M5
C2E1
E2
C1
23 23
40
φ 0.8
ABSOLUTE MAXIMUM RATINGS(TC=25°C)
Item Symbol
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
DC
1ms
Forward Current
DC
1ms
Collector Power Dissipation
Junction Temperature
Storage Temperature
Isolation Voltage
Screw Torque
Terminals
Mounting
VCES
VGES
IC
ICP
IF
IFM
PC
Tj
Tstg
Viso
-
Notes; *1: RMS current of Diode £ 60 Arms
*2, *3 : Recommended value 1.67 N·m (17 kgf·cm)
Unit
V
V
A
A
W
°C
°C
VRMS
N·m
(kgf·cm)
Weight : 230g
Value
1200
±20
200
400
200 *1
400
1130
-40 ~ +150
-40 ~ +125
2500(AC 1 minute)
1.96(20) *2
1.96(20) *3
CHARACTERISTICS (TC=25°C)
Item Symbol Unit Min. Typ. Max.
Test Conditions
Collector-Emitter Cut-Off Current
ICES mA -
- 1.0 VCE=1200V, VGE=0V
Gate-Emitter Leakage Current
IGES nA -
- ±500 VGE=±20V, VCE=0V
Collector-Emitter Saturation Voltage
VCE(sat)
V
-
2.2 2.8 IC=200A, VGE=15V
Gate-Emitter Threshold Voltage
VGE(TO)
V
-
-
10 VCE=5V, IC=200mA
Input Capacitance
Cies pF - 19000 - VCE=10V, VGE=0V, f=1MHz
Switching Times
Rise Time
Turn-ON Time
Fall Time
Turn-Off Time
tr
ton
tf
toff
- 0.2 0.5 VCC=600V
ms
-
-
0.35
0.2
0.8
0.35
RL=3.0W
RG=6.2W *4
- 0.5 1.0 VGE=±15V
Peak Forward Voltage Drop
VFM V - 2.5 3.5 IF=200A, VGE=0V
Reverse Recovery Time
trr ms - - 0.35 IF=200A, VGE=-10V, di/dt=300A/ms
IGBT
Thermal Impedance
FWD
Rth(j-c)
Rth(j-c)
°C/W
-
0.11
- Junction to case
0.20
Notes; *4:RG value is the test condition’s value for decision of the switching times, not recommended value, please determine
the suitable RG value after the measurement of switching waveforms (overshoot voltage, etc.) with appliance mounted.
Remark; The specification given herein, is subject to change without prior notice to improve product characteristics.
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet MBM200GR12.PDF ] |
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MBM200GR12 | IGBT POWER MODULE | Hitachi |
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