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KRC283S fiches techniques PDF

Korea Electronics - (KRC281S - KRC286S) EPITAXIAL PLANAR NPN TRANSISTOR

Numéro de référence KRC283S
Description (KRC281S - KRC286S) EPITAXIAL PLANAR NPN TRANSISTOR
Fabricant Korea Electronics 
Logo Korea Electronics 





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KRC283S fiche technique
SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
AUDIO MUTING APPLICATION.
FEATURES
High emitter-base voltage : VEBO=25V(Min)
High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA)
Low on resistance : Ron=1 (Typ.) (IB=5mA)
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
EQUIVALENT CIRCUIT
C
R1
B
KRC281S~KRC286S
EPITAXIAL PLANAR NPN TRANSISTOR
E
L BL
23
1
PP
M
1. EMITTER
2. BASE
3. COLLECTOR
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
E SOT-23
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
RATING
50
20
25
300
150
150
-55 150
UNIT
V
V
V
mA
mW
MARK SPEC
TYPE
KRC281S
KRC282S
KRC283S
KRC284S
KRC285S
KRC286S
hFE classification
B
MQB
MRB
MSB
MTB
MUB
MVB
Marking
Type Name
Lot No.
2002. 12. 5
Revision No : 1
1/2

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