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Numéro de référence | KRC106M | ||
Description | (KRC101M - KRC106M) EPITAXIAL PLANAR PNP TRANSISTOR | ||
Fabricant | Korea Electronics | ||
Logo | |||
SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
ᴌWith Built-in Bias Resistors.
ᴌSimplify Circuit Design.
ᴌReduce a Quantity of Parts and Manufacturing Process.
EQUIVALENT CIRCUIT
OUT
R1
IN
R2
COMMON
BIAS RESISTOR VALUES
TYPE NO. R1(kή) R2(kή)
KRC101M
4.7
4.7
KRC102M
10
10
KRC103M
22
22
KRC104M
47
47
KRC105M
2.2
47
KRC106M
4.7
47
KRC101M~KRC106M
EPITAXIAL PLANAR NPN TRANSISTOR
B
HM
C
EE
1 2 3N
L
1. EMITTER
2. COLLECTOR
3. BASE
O DIM MILLIMETERS
A 3.20 MAX
B 4.30 MAX
C 0.55 MAX
D 2.40+_ 0.15
E 1.27
F 2.30
G 14.00+_ 0.50
H 0.60 MAX
J 1.05
K 1.45
L 25
M 0.80
N 0.55 MAX
O 0.75
TO-92M
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
Output Voltage
KRC101Mᴕ106M
KRC101M
KRC102M
Input Voltage
KRC103M
KRC104M
KRC105M
KRC106M
Output Current
Power Dissipation
Junction Temperature
KRC101Mᴕ106M
Storage Temperature Range
SYMBOL
VO
VI
IO
PD
Tj
Tstg
RATING
50
20, -10
30, -10
40, -10
40, -10
12, -5
20, -5
100
400
150
-55ᴕ150
UNIT
V
V
mA
mW
ᴱ
ᴱ
1998. 7. 8
Revision No : 3
1/6
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Pages | Pages 6 | ||
Télécharger | [ KRC106M ] |
No | Description détaillée | Fabricant |
KRC106 | EPITAXIAL PLANAR NPN TRANSISTOR | KEC |
KRC106M | (KRC101M - KRC106M) EPITAXIAL PLANAR PNP TRANSISTOR | Korea Electronics |
KRC106S | (KRC101S - KRC106S) EPITAXIAL PLANAR PNP TRANSISTOR | Korea Electronics |
KRC106S | NPN Transistors | Kexin |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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