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Numéro de référence | KRC868E | ||
Description | (KRC866E - KRC872E) EPITAXIAL PLANAR NPN TRANSISTOR | ||
Fabricant | Korea Electronics | ||
Logo | |||
SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION
FEATURES
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
EQUIVALENT CIRCUIT
OUT
R1
IN
R2
COMMON
TYPE NO.
KRC866E
KRC867E
KRC868E
KRC869E
KRC870E
KRC871E
KRC872E
R1(k )
1
2.2
2.2
4.7
10
47
100
R2(k )
10
2.2
10
10
4.7
10
100
KRC866E~KRC872E
EPITAXIAL PLANAR NPN TRANSISTOR
B
B1
1 6 DIM MILLIMETERS
A 1.6+_ 0.05
A1 1.0 +_ 0.05
2 5 B 1.6+_ 0.05
B1 1.2 +_ 0.05
3 4 C 0.50
D 0.2+_ 0.05
H 0.5+_ 0.05
J 0.12+_ 0.05
PP
P5
1. Q1 COMMON (EMITTER)
2. Q1 IN (BASE)
3. Q2 OUT (COLLECTOR)
4. Q2 COMMON (EMITTER)
5. Q2 IN (BASE)
6. Q1 OUT (COLLECTOR)
TES6
EQUIVALENT CIRCUIT (TOP VIEW)
65 4
Q1
Q2
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Output Voltage
Input Voltage
Output Current
Power Dissipation
Junction Temperature
Storage Temperature Range
* Total Rating.
KRC866E~872E
KRC866E
KRC867E
KRC868E
KRC869E
KRC870E
KRC871E
KRC872E
KRC866E~872E
SYMBOL
VO
VI
IO
PD *
Tj
Tstg
MARK SPEC
TYPE KRC866E KRC867E KRC868E KRC869E KRC870E KRC871E KRC872E
MARK
N2
N4
N5
N6
N7
N8
N9
2002. 7. 10
Revision No : 2
12 3
RATING
50
10, -5
12, -10
12,-5
20, -7
30, -10
40, -15
40, -10
100
200
150
UNIT
V
V
mA
mW
-55 150
Marking
65
Type Name
4
1 23
1/6
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Pages | Pages 6 | ||
Télécharger | [ KRC868E ] |
No | Description détaillée | Fabricant |
KRC868E | (KRC866E - KRC872E) EPITAXIAL PLANAR NPN TRANSISTOR | Korea Electronics |
KRC868U | (KRC866U - KRC872U) EPITAXIAL PLANAR NPN TRANSISTOR | Korea Electronics |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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