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KRC884T fiches techniques PDF

Korea Electronics - (KRC881T - KRC886T) EPITAXIAL PLANAR NPN TRANSISTOR

Numéro de référence KRC884T
Description (KRC881T - KRC886T) EPITAXIAL PLANAR NPN TRANSISTOR
Fabricant Korea Electronics 
Logo Korea Electronics 





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KRC884T fiche technique
SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
AUDIO MUTING APPLICATION.
FEATURES
High emitter-base voltage : VEBO=25V(Min)
High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA)
Low on resistance : Ron=1 (Typ.) (IB=5mA)
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
EQUIVALENT CIRCUIT
R1
B
C
EQUIVALENT CIRCUIT (TOP VIEW)
65 4
Q1
Q2
E 12 3
KRC881T~KRC886T
EPITAXIAL PLANAR NPN TRANSISTOR
E
K BK
16
25
34
H
JJ
1. Q1 EMITTER
2. Q1 BASE
3. Q2 COLLECTOR
4. Q2 EMITTER
5. Q2 BASE
6. Q1 COLLECTOR
DIM
A
B
C
D
E
F
G
H
I
J
K
L
MILLIMETERS
2.9+_ 0.2
1.6+0.2/-0.1
0.70+_ 0.05
0.4+_ 0.1
2.8+0.2/-0.3
1.9+_ 0.2
0.95
0.16+_ 0.05
0.00-0.10
0.25+0.25/-0.15
0.60
0.55
TS6
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
* Package mounted on a ceramic board (600
0.8 )
MARK SPEC
TYPE
KRC881T
KRC882T
KRC883T
KRC884T
KRC885T
KRC886T
hFE classification
B
MQB
MRB
MSB
MTB
MUB
MVB
2002. 12. 5
Revision No : 2
SYMBOL
VCBO
VCEO
VEBO
IC
PC *
Tj
Tstg
RATING
50
20
25
300
0.9
150
-55 150
UNIT
V
V
V
mA
W
Marking
65 4
hFE Rank
Type Name
Lot No.
12 3
1/2

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