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Numéro de référence | KRC682T | ||
Description | (KRC681T - KRC686T) EPITAXIAL PLANAR NPN TRANSISTOR | ||
Fabricant | Korea Electronics | ||
Logo | |||
SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
AUDIO MUTING APPLICATION.
FEATURES
High emitter-base voltage : VEBO=25V(Min)
High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA)
Low on resistance : Ron=1 (Typ.) (IB=5mA)
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
EQUIVALENT CIRCUIT
C
R1
B
EQUIVALENT CIRCUIT (TOP VIEW)
54
Q1 Q2
E 12 3
KRC681T~KRC686T
EPITAXIAL PLANAR NPN TRANSISTOR
E
B
15
2
34
DIM MILLIMETERS
A 2.9+_ 0.2
B 1.6+0.2/-0.1
C 0.70+_ 0.05
D 0.4+_ 0.1
E 2.8+0.2/-0.3
F 1.9+_ 0.2
G 0.95
H 0.16+_ 0.05
I 0.00-0.10
J 0.25+0.25/-0.15
K 0.60
L 0.55
H
JJ
1. Q1 IN (BASE)
2. Q1, Q 2 COMMON (EMITTER)
3. Q2 IN (BASE)
4. Q2 OUT (COLLECTOR)
5. Q1 OUT (COLLECTOR)
TSV
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
* Package mounted on a ceramic board (600
0.8 )
MARK SPEC
TYPE
KRC681T
KRC682T
KRC683T
KRC684T
KRC685T
KRC686T
hFE classification
B
MQB
MRB
MSB
MTB
MUB
MVB
SYMBOL
VCBO
VCEO
VEBO
IC
PC *
Tj
Tstg
RATING
50
20
25
300
0.9
150
-55 150
UNIT
V
V
V
mA
W
Marking
hFE Rank
5
Type Name
4
Lot No.
123
2002. 12. 5
Revision No : 3
1/2
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Pages | Pages 2 | ||
Télécharger | [ KRC682T ] |
No | Description détaillée | Fabricant |
KRC682T | (KRC681T - KRC686T) EPITAXIAL PLANAR NPN TRANSISTOR | Korea Electronics |
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