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PDF KRC663E Data sheet ( Hoja de datos )
| Número de pieza | KRC663E | |
| Descripción | (KRC660E - KRC664E) EPITAXIAL PLANAR NPN TRANSISTOR | |
| Fabricantes | Korea Electronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de KRC663E (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
High Packing Density.
EQUIVALENT CIRCUIT
C
R1
B
EQUIVALENT CIRCUIT (TOP VIEW)
54
Q1 Q2
E 12 3
KRC660E~KRC664E
EPITAXIAL PLANAR NPN TRANSISTOR
B
B1
1 5 DIM MILLIMETERS
A 1.6 +_ 0.05
A1 1.0+_ 0.05
2 B 1.6+_ 0.05
B1 1.2+_ 0.05
3 4 C 0.50
D 0.2+_ 0.05
H 0.5+_ 0.05
P P J 0.12+_ 0.05
P5
1. Q1 IN (BASE)
2. Q1, Q 2 COMMON (EMITTER)
3. Q2 IN (BASE)
4. Q2 OUT (COLLECTOR)
5. Q1 OUT (COLLECTOR)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VCBO
VCEO
VEBO
50
50
5
Collector Current
IC 100
UNIT
V
V
V
mA
CHARACTERISTIC
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
* Total Rating.
TESV
SYMBOL RATING
PC * 200
Tj 150
Tstg -55 150
UNIT
mW
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN. TYP. MAX.
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
KRC660E
KRC661E
Input Resistor
KRC662E
KRC663E
KRC664E
Note : * Characteristic of Transistor Only.
ICBO
IEBO
hFE
VCE(sat)
fT *
VCB=50V, IE=0
VEB=5V, IC=0
VCE=5V, IC=1mA
IC=10mA, IB=0.5mA
VCE=10V, IC=5mA
R1
MARK SPEC
TYPE
KRC660E
KRC661E
KRC662E
KRC663E
KRC664E
- - 100
- - 100
120 -
-
- 0.1 0.3
- 250 -
- 4.7 -
- 10 -
- 100 -
- 22 -
- 47 -
Marking
5
Type Name
4
MARK
NK
NM
NN
NO
NP
UNIT
nA
nA
V
MHz
k
1 23
2002. 7. 10
Revision No : 3
1/4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet KRC663E.PDF ] | |
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