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Numéro de référence | KRC671E | ||
Description | (KRC666E - KRC672E) EPITAXIAL PLANAR NPN TRANSISTOR | ||
Fabricant | Korea Electronics | ||
Logo | |||
SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION
FEATURES
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
EQUIVALENT CIRCUIT
OUT
R1
IN
R2
COMMON
TYPE NO.
KRC666E
KRC667E
KRC668E
KRC669E
KRC670E
KRC671E
KRC672E
R1(k )
1
2.2
2.2
4.7
10
47
100
R2(k )
10
2.2
10
10
4.7
10
100
KRC666E~KRC672E
EPITAXIAL PLANAR NPN TRANSISTOR
B
B1
1 5 DIM MILLIMETERS
A 1.6 +_ 0.05
A1 1.0+_ 0.05
2 B 1.6+_ 0.05
B1 1.2+_ 0.05
3 4 C 0.50
D 0.2+_ 0.05
H 0.5+_ 0.05
P P J 0.12+_ 0.05
P5
1. Q1 IN (BASE)
2. Q1, Q 2 COMMON (EMITTER)
3. Q2 IN (BASE)
4. Q2 OUT (COLLECTOR)
5. Q1 OUT (COLLECTOR)
TESV
EQUIVALENT CIRCUIT (TOP VIEW)
54
Q1 Q2
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Output Voltage
Input Voltage
Output Current
Power Dissipation
Junction Temperature
Storage Temperature Range
* Total Rating.
KRC666E~672E
KRC666E
KRC667E
KRC668E
KRC669E
KRC670E
KRC671E
KRC672E
KRC666E~672E
SYMBOL
VO
VI
IO
PD *
Tj
Tstg
MARK SPEC
TYPE KRC666E KRC667E KRC668E KRC669E KRC670E KRC671E KRC672E
MARK
N2
N4
N5
N6
N7
N8
N9
12 3
RATING
50
10, -5
12, -10
12,-5
20, -7
30, -10
40, -15
40, -10
100
200
150
-55 150
Marking
5
Type Name
4
UNIT
V
V
mA
mW
1 23
2002. 7. 10
Revision No : 2
1/6
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Pages | Pages 6 | ||
Télécharger | [ KRC671E ] |
No | Description détaillée | Fabricant |
KRC671E | (KRC666E - KRC672E) EPITAXIAL PLANAR NPN TRANSISTOR | Korea Electronics |
KRC671U | (KRC666U - KRC672U) EPITAXIAL PLANAR NPN TRANSISTOR | Korea Electronics |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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