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Numéro de référence | IRFM054 | ||
Description | N-CHANNEL POWER MOSFET | ||
Fabricant | Seme LAB | ||
Logo | |||
1 Page
IRFM054
MECHANICAL DATA
Dimensions in mm (inches)
3.53 (0.139)
3.78 (0.149)
Dia.
13.59 (0.535)
13.84 (0.545)
6.32 (0.249)
6.60 (0.260)
1.02 (0.040)
1.27 (0.050)
123
3.81 (0.150)
BSC
0.89 (0.035)
1.14 (0.045)
3.81 (0.150)
BSC
TO–254AA – Metal Package
Pin 1 – Drain
Pin 2 – Source
Pin 3 – Gate
N–CHANNEL
POWER MOSFET
VDSS
ID(cont)
RDS(on)
60V
35A *
0.027Ω
FEATURES
• HERMETICALLY SEALED ISOLATED
PACKAGE
• AVALANCHE ENERGY RATING
• SIMPLE DRIVE REQUIREMENTS
• ALSO AVAILABLE IN TO–220 METAL AND
SURFACE MOUNT PACKAGES
• EASE OF PARALLELING
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VGS Gate – Source Voltage
ID
Continuous Drain Current
(VGS = 10V , Tcase = 25°C)
ID
Continuous Drain Current
(VGS = 10V , Tcase = 100°C)
IDM Pulsed Drain Current 1
PD Power Dissipation @ Tcase = 25°C
Linear Derating Factor
±20V
35A*
35A
220A
150W
1.2W/°C
EAS
dv/dt
Single Pulse Avalanche Energy 2
Peak Diode Recovery 3
480mJ
4.5V/ns
TJ , Tstg
TL
RθJC
RθCS
RθJA
Operating and Storage Temperature Range
Lead Temperature measured 1/16” (1.6mm) from case for 10 sec.
Thermal Resistance Junction to Case
Thermal Resistance Case to Sink (Typical)
Thermal Resistance Junction to Ambient
–55 to 150°C
300°C
0.83°C/W
0.21°C/W
48°C/W
Notes
1) Repetitive Rating – Pulse width limited by Maximum Junction Temperature
2) @ VDD = 25V , L ≥ 450µH , RG = 25Ω , Peak IL = 35A , Starting TJ = 25°C
3) @ ISD ≤ 35A , di/dt ≤ 200A/µs , VDD ≤ BVDSS , TJ ≤ 125°C , SUGGESTED RG = 2.35Ω
* ID Current limited by pin diameter.
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 11/94
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Pages | Pages 2 | ||
Télécharger | [ IRFM054 ] |
No | Description détaillée | Fabricant |
IRFM054 | N-CHANNEL POWER MOSFET | Seme LAB |
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