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Número de pieza | KMM5364103CK | |
Descripción | (KMM5364103CK / KMM5364003CK) 4MBx36 DRAM Simm Using 4MBx4 And 16MB Quad Cas | |
Fabricantes | Samsung Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de KMM5364103CK (archivo pdf) en la parte inferior de esta página. Total 17 Páginas | ||
No Preview Available ! DRAM MODULE
KMM5364003CK/CKG
KMM5364103CK/CKG
4Byte 4Mx36 SIMM
(4Mx4 & 16M Quad CAS base)
Revision 0.1
Nov. 1997
1 page DRAM MODULE
KMM5364003CK/CKG
KMM5364103CK/CKG
ABSOLUTE MAXIMUM RATINGS *
Item
Symbol
Rating
Unit
Voltage on any pin relative to V SS
Voltage on V CC supply relative to V SS
Storage Temperature
Power Dissipation
Short Circuit Output Current
VIN, VOUT
VCC
Tstg
Pd
IOS
-1 to +7.0
-1 to +7.0
-55 to +150
9
50
V
V
°C
W
mA
* Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to
the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for in tended
periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS (Voltage referenced to V SS, TA = 0 to 70°C)
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Item
Symbol
VCC
VSS
VIH
VIL
Min
4.5
0
2.4
-1.0*2
Typ Max
5.0 5.5
00
- VCC+1*1
- 0.8
*1 : VCC+2.0V/20ns, Pulse width is measured at VCC.
*2 : -2.0V/ 20ns, Pulse width is measured at VSS.
Unit
V
V
V
V
DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted)
Symbol
ICC1
ICC2
ICC3
ICC4
ICC5
ICC6
II(L)
IO(L)
VOH
VOL
Speed
-5
-6
Don′t care
-5
-6
-5
-6
Don′t care
-5
-6
Don′t care
Don′t care
KMM5364003CK/CKG
Min Max
- 810
- 720
- 18
- 810
- 720
- 720
- 630
-9
- 810
- 720
-45 45
-5 5
2.4 -
- 0.4
KMM5364103CK/CKG
Min Max
- 990
- 900
- 18
- 990
- 900
- 810
- 720
-9
- 990
- 900
-45 45
-5 5
2.4 -
- 0.4
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
uA
uA
V
V
ICC1 : Operating Current * ( RAS, CAS, Address cycling @ tRC=min)
ICC2 : Standby Current ( RAS=CAS=W=VIH)
ICC3 : RAS Only Refresh Current * ( CAS=VIH, RAS cycling @ tRC=min)
ICC4 : Fast Page Mode Current * ( RAS=VIL, CAS Address cycling : tPC=min)
ICC5 : Standby Current ( RAS=CAS=W=Vcc-0.2V)
ICC6 : CAS-Before-RAS Refresh Current * ( RAS and CAS cycling @ tRC=min)
II(L) : Input Leakage Current (Any input 0 ≤VIN≤Vcc+0.5V, all other pins not under test=0 V)
IO(L) : Output Leakage Current(Data Out is disabled, 0V ≤VOUT≤Vcc)
VOH : Output High Voltage Level (I OH = -5mA)
VOL : Output Low Voltage Level (I OL = 4.2mA)
* NOTE : ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open.
ICC is specified as an average current. In I CC1 and ICC3, address can be changed maximum once while RAS=VIL. In ICC4,
address can be changed maximum once within one page mode cycle, tPC.
5 Page DRAM MODULE
FAST PAGE WRITE CYCLE ( EARLY WRITE )
NOTE : DOUT = OPEN
KMM5364003CK/CKG
KMM5364103CK/CKG
VIH -
RAS
VIL -
VIH -
CAS
VIL -
VIH -
A
VIL -
VIH -
W
VIL -
VIH -
DQ
VIL -
tRASP
tRHCP
tCRP
tASR
tRCD
tRAD
tASC
tRAH
tPC
tCAS
tCSH
tCAH
ROW
ADDR
COLUMN
ADDRESS
¡ó
tPC
tCP tCP
tCAS
¡ó
tRSH
tCAS
tASC tCAH
COLUMN
ADDRESS
tASC tCAH
¡ó
COLUMN
ADDRESS
¡ó
tWCS
tWCH
tWP
tWCS
tWCH tWCS
¡ó
tWP
tWCH
tWP
tCWL
tDS tDH
VALID
DATA-IN
tCWL
tDS tDH
VALID
DATA-IN
¡ó
¡ó
tCWL
tRWL
tDS tDH
VALID
DATA-IN
tRP
Don′t care
Undefined
11 Page |
Páginas | Total 17 Páginas | |
PDF Descargar | [ Datasheet KMM5364103CK.PDF ] |
Número de pieza | Descripción | Fabricantes |
KMM5364103CK | (KMM5364103CK / KMM5364003CK) 4MBx36 DRAM Simm Using 4MBx4 And 16MB Quad Cas | Samsung Semiconductor |
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