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PDF 2SC2959 Data sheet ( Hoja de datos )
| Número de pieza | 2SC2959 | |
| Descripción | NPN Silicon Transistor | |
| Fabricantes | NEC | |
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DATA SHEET
SILICON TRANSISTORS
2SC2958, 2959
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS
FEATURES
• Ideal for use of high voltage current such as TV vertical
deflection (drive and output), audio output, pin cushion
correction
• Complementary transistor with 2SA1221 and 2SA1222
VCEO = 140 V: 2SA1221/2SC2958
VCEO = 160 V: 2SA1222/2SC2959
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Collector to base voltage
VCBO
Collector to emitter voltage
VCEO
Emitter to base voltage
VEBO
Collector current (DC)
IC(DC)
Collector current (pulse)
IC(pulse)*
Total power dissipation
PT
Junction temperature
Tj
Storage temperature
Tstg
* PW ≤ 10 ms, duty cycle ≤ 50%
Ratings
160
140/160
5.0
500
1.0
1.0
150
−55 to +150
Unit
V
V
V
mA
A
W
°C
°C
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Conditions
Collector cutoff current
ICBO VCB = 100 V, IE = 0
Emitter cutoff current
IEBO VEB = 5.0 V, IC = 0
DC current gain
hFE ** VCE = 2.0 V, IC = 100 mA
DC base voltage
VBE ** VCE = 5.0 V, IC = 20 mA
Collector saturation voltage VCE(sat) ** IC = 1.0 A, IB = 0.2 A
Base saturation voltage
VBE(sat) ** IC = 1.0 A, IB = 0.2 A
Output capacitance
Cob VCB = 10 V, IE = 0, f = 1.0 MHz
Gain bandwidth product
fT VCE = 10 V, IE = −20 mA
** Pulse test PW ≤ 350 µs, duty cycle ≤ 2% per pulsed
PACKAGE DRAWING (UNIT: mm)
MIN.
100
0.6
30
TYP.
150
0.64
0.32
1.1
13
60
MAX.
200
200
400
0.7
0.7
1.3
30
Unit
nA
nA
V
V
V
pF
MHz
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16150EJ1V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
©
21090928
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SC2959.PDF ] | |
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