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Numéro de référence | SD1006 | ||
Description | NPN SILICON HIGH FREQUENCY TRANSISTOR | ||
Fabricant | Advanced Semiconductor | ||
Logo | |||
1 Page
SD1006
NPN SILICON HIGH FREQUENCY TRANSISTOR
DESCRIPTION:
The ASI SD1006 is a High Frequency
Transistor for General Purpose
Amplifier Applications.
MAXIMUM RATINGS
IC 400 mA
VCEO
30 V
VCBO
50 V
PDISS
3.5 W @ TC = 25 °C
TJ -65 °C to +200 °C
TSTG
-65 °C to +200 °C
θJC 50 °C/W
PACKAGE STYLE TO-39
1 = EMITTER 2 = BASE
3 = COLLECTOR
NONE
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
BVCEO
IC = 5.0 mA
BVCBO
IC = 100 µA
BVEBO
IE = 100 µA
ICEO
VCE = 28 V
hFE VCE = 15 V IC = 50 mA
ft VCE = 15 V IC = 50 mA
Cob VCB = 30 V
f = 100 KHz
Cib VEB = 0.5 V
f = 100 KHz
NFNB
VCE = 10 V IC = 10 mA
f = 2000 MHz
NFBB
VCE = 15 V IC = 50 mA
f = 216 MHz
GVE
VCE = 15 V IC = 50 mA
f = 216 MHz
XMOD
VCE = 15 V
IC = 50 mA Pout = +45 dbmV
2NDO
VCE = 15 V
IC = 50 mA Pout = +45 dbmV
MINIMUM
30
50
5.0
30
1500
TYPICAL MAXIMUM
1800
2.5
8.0
2.7
7.0
7.2
-60
-60
100
300
3.5
10
8.0
6.8
-57
-50
UNITS
V
V
V
µA
---
MHz
pF
pF
dB
dB
dB
dB
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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Pages | Pages 1 | ||
Télécharger | [ SD1006 ] |
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