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Numéro de référence | KRA736E | ||
Description | (KRA736E - KRA742E) EPITAXIAL PLANAR PNP TRANSISTOR | ||
Fabricant | Korea Electronics | ||
Logo | |||
SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION
FEATURES
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
EQUIVALENT CIRCUIT
OUT
R1
IN
R2
COMMON(+)
BIAS RESISTOR VALUES
TYPE NO. R1(k ) R2(k )
KRA736E
1
10
KRA737E
2.2
2.2
KRA738E
2.2
10
KRA739E
4.7
10
KRA740E
10
4.7
KRA741E
47
10
KRA742E
100
100
KRA736E~KRA742E
EPITAXIAL PLANAR PNP TRANSISTOR
B
B1
1 6 DIM MILLIMETERS
A 1.6+_ 0.05
A1 1.0 +_ 0.05
2 5 B 1.6+_ 0.05
B1 1.2 +_ 0.05
3 4 C 0.50
D 0.2+_ 0.05
H 0.5+_ 0.05
J 0.12+_ 0.05
PP
P5
1. Q1 COMMON (EMITTER)
2. Q2 COMMON (EMITTER)
3. Q2 IN (BASE)
4. Q2 OUT (COLLECTOR)
5. Q1 IN (BASE)
6. Q1 OUT (COLLECTOR)
TES6
EQUIVALENT CIRCUIT (TOP VIEW)
65 4
Q1
Q2
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Output Voltage
Input Voltage
Output Current
Power Dissipation
Junction Temperature
Storage Temperature Range
* : Total Rating.
KRA736E 742E
KRA736E
KRA737E
KRA738E
KRA739E
KRA740E
KRA741E
KRA742E
KRA736E 742E
SYMBOL
VO
VI
IO
PD *
Tj
Tstg
MARK SPEC
TYPE KRA736E KRA737E KRA738E KRA739E KRA740E KRA741E KRA742E
MARK
J2
J4
J5
J6
J7
J8
J9
12
RATING
-50
-10, 5
-12, 10
-12, 5
-20, 7
-30, 10
-40, 15
-40, 10
-100
200
150
-55 150
Marking
65
3
UNIT
V
V
mA
mW
Type Name
4
1 23
2002. 7. 9
Revision No : 2
1/6
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Pages | Pages 6 | ||
Télécharger | [ KRA736E ] |
No | Description détaillée | Fabricant |
KRA736E | (KRA736E - KRA742E) EPITAXIAL PLANAR PNP TRANSISTOR | Korea Electronics |
KRA736U | (KRA736U - KRA742U) EPITAXIAL PLANAR PNP TRANSISTOR | Korea Electronics |
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