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Numéro de référence | KRA572E | ||
Description | (KRA566E - KRA572E) EPITAXIAL PLANAR PNP TRANSISTOR | ||
Fabricant | Korea Electronics | ||
Logo | |||
SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION
FEATURES
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
EQUIVALENT CIRCUIT
OUT
R1
IN
R2
COMMON(+)
BIAS RESISTOR VALUES
TYPE NO. R1(k ) R2(k )
KRA566E
1
10
KRA567E
2.2
2.2
KRA568E
2.2
10
KRA569E
4.7
10
KRA570E
10
4.7
KRA571E
47
10
KRA572E
100
100
KRA566E~KRA572E
EPITAXIAL PLANAR PNP TRANSISTOR
B
B1
1 5 DIM MILLIMETERS
A 1.6 +_ 0.05
A1 1.0+_ 0.05
2 B 1.6+_ 0.05
B1 1.2+_ 0.05
3 4 C 0.50
D 0.2+_ 0.05
H 0.5+_ 0.05
P P J 0.12+_ 0.05
P5
1. Q1 IN (BASE)
2. Q1, Q 2 COMMON (EMITTER)
3. Q2 IN (BASE)
4. Q2 OUT (COLLECTOR)
5. Q1 OUT (COLLECTOR)
TESV
EQUIVALENT CIRCUIT (TOP VIEW)
54
Q1 Q2
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Output Voltage
Input Voltage
Output Current
Power Dissipation
Junction Temperature
Storage Temperature Range
* : Total Rating.
KRA566E 572E
KRA566E
KRA567E
KRA568E
KRA569E
KRA570E
KRA571E
KRA572E
KRA566E 572E
SYMBOL
VO
VI
IO
PD *
Tj
Tstg
12
RATING
-50
-10, 5
-12, 10
-12, 5
-20, 7
-30, 10
-40, 15
-40, 10
-100
200
150
-55 150
Maring
MARK SPEC
5
TYPE KRA566E KRA567E KRA568E KRA569E KRA570E KRA571E KRA572E
MARK
P2
P4
P5
P6
P7
P8
P9
3
UNIT
V
V
mA
mW
Type Name
4
1 23
2002. 7. 9
Revision No : 2
1/6
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Pages | Pages 6 | ||
Télécharger | [ KRA572E ] |
No | Description détaillée | Fabricant |
KRA572E | (KRA566E - KRA572E) EPITAXIAL PLANAR PNP TRANSISTOR | Korea Electronics |
KRA572U | (KRA566U - KRA572U) EPITAXIAL PLANAR PNP TRANSISTOR | Korea Electronics |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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