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PDF IRLMS2002 Data sheet ( Hoja de datos )
| Número de pieza | IRLMS2002 | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IRLMS2002 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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l Ultra Low On-Resistance
l N-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l 2.5V Rated
D
D
G
Description
These N-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The Micro6 package with its customized leadframe
produces a HEXFET power MOSFET with RDS(on) 60%
less than a similar size SOT-23. This package is ideal for
applications where printed circuit board space is at a
premium. It's unique thermal design and RDS(on) reduction
enables a current-handling increase of nearly 300%
compared to the SOT-23.
PD- 93758D
IRLMS2002
HEXFET® Power MOSFET
A
1 6D
VDSS = 20V
2 5D
3 4 S RDS(on) = 0.030Ω
Top View
Micro6
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Parameter
Drain- Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
20
6.5
5.2
20
2.0
1.3
0.016
± 12
-55 to + 150
Units
V
A
W
W/°C
V
°C
Thermal Resistance
RθJA
Parameter
Maximum Junction-to-Ambient
www.irf.com
Max.
62.5
Units
°C/W
1
01/13/03
1 page  
IRLMS2002
6.0
5.0
4.0
3.0
2.0
1.0
0.0
25
50 75 100 125
TC , Case Temperature ( °C)
150
Fig 9. Maximum Drain Current Vs.
Case Temperature
0.20
0.10
0.00
-0.10
Id = 250µA
-0.20
-0.30
-0.40
-50 -25
0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 10. Typical Vgs(th) Variance Vs.
Juction Temperature
100
D = 0.50
0.20
10
0.10
0.05
0.02
1
0.01
0.1
0.00001
PDM
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01 0.1
1
t1, Rectangular Pulse Duration (sec)
10
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
100
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRLMS2002.PDF ] | |
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