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Numéro de référence | IRLMS6702 | ||
Description | HEXFET Power MOSFET | ||
Fabricant | International Rectifier | ||
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1 Page
PD - 91414C
IRLMS6702
HEXFET® Power MOSFET
l Generation V Technology
l Micro6 Package Style
l Ultra Low RDS(on)
l P-Channel MOSFET
D1
D2
A
6D
5D
VDSS = -20V
G3
4S
Description
Fifth Generation HEXFET® power MOSFETs from
Top View
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET® power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
RDS(on) = 0.20Ω
The Micro6 package with its customized leadframe
produces a HEXFET® power MOSFET with RDS(on)
60% less than a similar size SOT-23. This package is
ideal for applications where printed circuit board space
is at a premium. It's unique thermal design and RDS(on)
reduction enables a current-handling increase of
nearly 300% compared to the SOT-23.
Micro6
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ, TSTG
Parameter
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Max.
-2.4
-1.9
-13
1.7
13
± 12
5.0
-55 to + 150
Units
A
W
mW/°C
V
V/ns
°C
Thermal Resistance Ratings
RθJA
Parameter
Maximum Junction-to-Ambient
www.irf.com
Min.
Typ.
Max
75
Units
°C/W
1
3/18/04
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Pages | Pages 9 | ||
Télécharger | [ IRLMS6702 ] |
No | Description détaillée | Fabricant |
IRLMS6702 | HEXFET Power MOSFET | International Rectifier |
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