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IRLMS6802 fiches techniques PDF

International Rectifier - HEXFET Power MOSFET

Numéro de référence IRLMS6802
Description HEXFET Power MOSFET
Fabricant International Rectifier 
Logo International Rectifier 





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IRLMS6802 fiche technique
l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
PD- 91848E
IRLMS6802
HEXFET® Power MOSFET
D1
D2
A
6D
5D
VDSS = -20V
G
Description
These P-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The Micro6package with its customized leadframe
produces a HEXFETpower MOSFET with RDS(on) 60%
less than a similar size SOT-23. This package is ideal for
applications where printed circuit board space is at a
premium. The unique thermal design and RDS(on) reduction
enables a current-handling increase of nearly 300%
compared to the SOT-23.
34
Top View
S RDS(on) = 0.050
Micro6ä
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
EAS
VGS
TJ, TSTG
Parameter
Drain- Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy„
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
RθJA
Parameter
Maximum Junction-to-Ambientƒ
www.irf.com
Max.
-20
-5.6
-4.5
-45
2.0
1.3
0.016
31
± 12
-55 to + 150
Max.
62.5
Units
V
A
W
W/°C
mJ
V
°C
Units
°C/W
1
01/13/03

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