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IRLM110A fiches techniques PDF

International Rectifier - HEXFET Power MOSFET

Numéro de référence IRLM110A
Description HEXFET Power MOSFET
Fabricant International Rectifier 
Logo International Rectifier 





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IRLM110A fiche technique
Advanced Power MOSFET
FEATURES
ν Avalanche Rugged Technology
ν Rugged Gate Oxide Technology
ν Lower Input Capacitance
ν Improved Gate Charge
ν Extended Safe Operating Area
ν Lower Leakage Current : 10 µA (Max.) @ VDS = 100V
ν Lower RDS(ON) : 0.336 (Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25oC)
Continuous Drain Current (TC=70oC)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak Diode Recovery dv/dt
Total Power Dissipation (TC=25oC) *
Linear Derating Factor *
(3)
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
IRLM110A
BVDSS = 100 V
RDS(on) = 0.44
ID = 1.5 A
SOT-223
1
3
2
1. Gate 2. Drain 3. Source
Value
100
1.5
1.18
12
±20
60
1.5
0.22
6.5
2.2
0.018
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/oC
oC
Thermal Resistance
Symbol
Characteristic
Typ.
RθJA Junction-to-Ambient *
--
* When mounted on the minimum pad size recommended (PCB Mount).
Max.
56.8
Units
oC/W
Rev. A

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