|
|
Numéro de référence | IRLM110A | ||
Description | HEXFET Power MOSFET | ||
Fabricant | International Rectifier | ||
Logo | |||
1 Page
Advanced Power MOSFET
FEATURES
ν Avalanche Rugged Technology
ν Rugged Gate Oxide Technology
ν Lower Input Capacitance
ν Improved Gate Charge
ν Extended Safe Operating Area
ν Lower Leakage Current : 10 µA (Max.) @ VDS = 100V
ν Lower RDS(ON) : 0.336 Ω (Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25oC)
Continuous Drain Current (TC=70oC)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak Diode Recovery dv/dt
Total Power Dissipation (TC=25oC) *
Linear Derating Factor *
(3)
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
IRLM110A
BVDSS = 100 V
RDS(on) = 0.44 Ω
ID = 1.5 A
SOT-223
1
3
2
1. Gate 2. Drain 3. Source
Value
100
1.5
1.18
12
±20
60
1.5
0.22
6.5
2.2
0.018
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/oC
oC
Thermal Resistance
Symbol
Characteristic
Typ.
RθJA Junction-to-Ambient *
--
* When mounted on the minimum pad size recommended (PCB Mount).
Max.
56.8
Units
oC/W
Rev. A
|
|||
Pages | Pages 7 | ||
Télécharger | [ IRLM110A ] |
No | Description détaillée | Fabricant |
IRLM110A | HEXFET Power MOSFET | International Rectifier |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |