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Numéro de référence | IRLM220A | ||
Description | HEXFET Power MOSFET | ||
Fabricant | International Rectifier | ||
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1 Page
Advanced Power MOSFET
FEATURES
ν Avalanche Rugged Technology
ν Rugged Gate Oxide Technology
ν Lower Input Capacitance
ν Improved Gate Charge
ν Extended Safe Operating Area
ν Lower Leakage Current : 10 µA (Max.) @ VDS = 200V
ν Lower RDS(ON) : 0.609 Ω (Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TA=25°C)
Continuous Drain Current (TA=70°C)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak Diode Recovery dv/dt
Total Power Dissipation (TA=25°C) *
Linear Derating Factor *
(3)
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
IRLM220A
BVDSS = 200 V
RDS(on) = 0.8 Ω
ID = 1.13 A
SOT-223
1
3
2
1. Gate 2. Drain 3. Source
Value
200
1.13
0.9
9
±20
29
1.13
0.2
5
2
0.016
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
Thermal Resistance
Symbol
RθJA
Characteristic
Junction-to-Ambient *
Typ.
--
* When mounted on the minimum pad size recommended (PCB Mount).
Max.
62.5
Units
°C/W
Rev. A
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Pages | Pages 7 | ||
Télécharger | [ IRLM220A ] |
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