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Numéro de référence | CEP06N5 | ||
Description | N-Channel Logic Level Enhancement Mode Field Effect Transistor | ||
Fabricant | Chino-Excel Technology | ||
Logo | |||
CEP06N5/CEB06N5
Oct. 2002
N-Channel Logic Level Enhancement Mode Field Effect Transistor 44
FEATURES
500V , 6.6A , RDS(ON)=1Ω @VGS=10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handling capability.
TO-220 & TO-263 package.
D
G
D
GS
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
S
ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
-Pulsed
ID
IDM
Drain-Source Diode Forward Current
IS
Maximum Power Dissipation @Tc=25 C
Derate above 25 C
Operating and Storage Temperautre Range
PD
TJ, TSTG
Limit
500
Ć30
6.6
20
6.6
104
0.83
-55 to 150
Unit
V
V
A
A
A
W
W/ C
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
RįJC
RįJA
4-17
1.2
62.5
C/W
C/W
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Pages | Pages 5 | ||
Télécharger | [ CEP06N5 ] |
No | Description détaillée | Fabricant |
CEP06N5 | N-Channel Logic Level Enhancement Mode Field Effect Transistor | Chino-Excel Technology |
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