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Sanken Electric - Silicon NPN Triple Diffused Planar Transistor

Numéro de référence 2SB1686
Description Silicon NPN Triple Diffused Planar Transistor
Fabricant Sanken Electric 
Logo Sanken Electric 





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2SB1686 fiche technique
Darlington
2SB1686
(70) E
B
Equivalent circuit C
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2642) Application : Audio, Series Regulator and General Purpose
sAbsolute maximum ratings (Ta=25°C) sElectrical Characteristics
(Ta=25°C)
Symbol
Ratings
Unit
Symbol
Conditions
Ratings
Unit
VCBO
–110
V ICBO
VCB=–110V
–100max
µA
VCEO
–110
V IEBO
VEB=–5V
–100max
µA
VEBO
–5
V V(BR)CEO
IC=–30mA
–110min
V
IC
–6
A hFE
VCE=–4V, IC=–5A
5000min
IB
–1
A
VCE(sat)
IC=–5A, IB=–5mA
–2.5max
V
PC
30(Tc=25°C)
W
VBE(sat)
IC=–5A, IB=–5mA
–3.0max
V
Tj
150 °C fT
VCE=–12V, IE=0.5A
100typ
MHz
Tstg
–55 to +150
°C
COB
VCB=–10V, f=1MHz
110typ
pF
hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
sTypical Switching Characteristics (Common Emitter)
VCC
RL
(V) ()
IC
VBB1
VBB2
IB1
IB2
ton tstg
tf
(A)
(V)
(V)
(mA)
(mA)
(µs)
(µs) (µs)
–30 6
–5 –10
5
–5
5 1.1typ 3.2typ 1.1typ
External Dimensions FM20(TO220F)
10.1±0.2
4.2±0.2
2.8 c0.5
ø3.3±0.2
a
b
1.35±0.15
1.35±0.15
2.54
0.85
+0.2
-0.1
2.54
0.45
+0.2
-0.1
2.4±0.2
2.2±0.2
Weight : Approx 2.0g
BCE
a. Part No.
b. Lot No.
I C– V CE Characteristics (Typical)
–6
––00..54mmAA
–0.3mA
–0.2mA
–4
IB=–0.1mA
–2
V CE( s a t ) – I B Characteristics (Typical)
–3
I C– V BE Temperature Characteristics (Typical)
(VCE=–4V)
–6
–2 –4
–5A
IC=–3A
–1 –2
0
0 –2 –4 –6
Collector-Emitter Voltage VCE(V)
0
–0.1
–0.5 –1
–5 –10
Base Current IB(mA)
–50 –100
0
0 –1 –2 –3
Base-Emittor Voltage VBE(V)
h FE– I C Characteristics (Typical)
50000
(VCE=–4V)
10000
5000
h FE– I C Temperature Characteristics (Typical)
50000
10000
5000
(VCE=–4V)
125˚C
25˚C
–30˚C
θ j-a– t Characteristics
5.0
1.0
1000 1000
500 500
0.5
100
–0.01
–0.05 –0.1
–0.5 –1
Collector Current IC(A)
–5 –6
100
–0.01
–0.05 –0.1
–0.5 –1
Collector Current IC(A)
–5 –6
0.3
1
10 100
Time t(ms)
1000
f T– I E Characteristics (Typical)
120
(VCE=–12V)
100 Typ
80
60
40
20
0
0.02
0.05 0.1
0.5 1
Emitter Current IE(A)
56
Safe Operating Area (Single Pulse)
–20
–10
–5
DC
1
00
m
1
s
0
m
s
–1
–0.5
–0.1
Without Heatsink
Natural Cooling
–0.05
–3
–5 –10
–50 –100 –200
Collector-Emitter Voltage VCE(V)
Pc–Ta Derating
30
20
10
Without Heatsink
2
0
0 25 50 75 100 125
Ambient Temperature Ta(˚C)
150
57

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