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2SB1706 fiches techniques PDF

ROHM Semiconductor - LOW FREQUENCY AMPLIFIER

Numéro de référence 2SB1706
Description LOW FREQUENCY AMPLIFIER
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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2SB1706 fiche technique
Transistors
Low frequency amplifier
2SB1706
zApplication
Low frequency amplifier
Driver
zFeatures
1) A collector current is large.
2) VCE(sat) -370mV
At lc= -1.5A / lB= -75mA
zExternal dimensions (Unit : mm)
Each lead has same dimensions
0.4 1.0MAX
0.85
0.7
(3)
(1) (2)
0~0.1
0.95 0.95
1.9
2.9
0.16
ROHM : TSMT3
2SB1706
Abbreviated symbol : XY
(1) Base
(2) Emitter
(3) Collector
2SB1706
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Collector-base voltage
VCBO
Collector-emitter voltage
VCEO
Emitter-base voltage
VEBO
Collector current
IC
ICP
Power dissipation
PC
Junction temperature
Tj
Range of storage temperature Tstg
1 Single pulse, Pw=1ms
2 Each Terminal Mounted on a Recommended
Limits
30
30
6
2
4
500
150
55 to +150
Unit
V
V
V
A
A1
mW2
°C
°C
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff curent
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min. Typ. Max. Unit
Conditions
30 − − V IC= −10µA
30 − − V IC= −1mA
6 − − V IE= −10µA
− − −100 nA VCB= −30V
− − −100 nA VEB= −6V
− −180 370 mV IC= −1.5A, IB= −75mA
270 680 VCE= −2V, IC= −200mA
280 MHz VCE= −2V, IE=200mA, f=100MHz
20 pF VCB= −10V, IE=0A, f=1MHz
Rev.B
1/2

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