IRFU9310 Datasheet PDF - IRF
| Part Number | IRFU9310 | |
| Description | Power MOSFET ( Transistor ) | |
| Manufacturers | IRF | |
| Logo |  |
|
|
There is a preview and IRFU9310 download ( pdf file ) link at the bottom of this page. Total 10 Pages | ||
Preview 1 page No Preview Available !
PRELIMINARY
l P-Channel
l Surface Mount (IRFR9310)
l Straight Lead (IRFU9310)
l Advanced Process Technology
l Fast Switching
l Fully Avalanche Rated
G
Description
Third Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D-Pak is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB mount)**
Junction-to-Ambient
PD 9.1663
IRFR/U9310
HEXFET® Power MOSFET
D
VDSS = -400V
RDS(on) = 7.0Ω
S ID = -1.8A
D-Pak
TO -252A A
I-Pak
TO -2 5 1 AA
Max.
-1.8
-1.1
-7.2
50
0.40
± 20
92
-1.8
5.0
-24
-55 to + 150
300 (1.6mm from case )
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Typ.
–––
–––
–––
Max.
2.5
50
110
Units
°C/W
7/30/97
|
| |
 
2.0
1.6
1.2
0.8
0.4
0.0
25
50 75 100 125
TC, Case Temperature ( °C)
150
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
IRFR/U9310
VDS
VGS
RG
RD
D.U.T.
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
-
+ VDD
Fig 10a. Switching Time Test Circuit
VGS
10%
td(on) tr
td(off) tf
90%
VDS
Fig 10b. Switching Time Waveforms
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + T C
0.0001
0.001
0.01
t1, Rectangular Pulse Duration (sec)
0.1
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IRFU9310 electronic component. |
| Information | Total 10 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ IRFU9310.PDF Datasheet ] | |
Share Link :
Electronic Components Distributor
|
An electronic components distributor is a company that sources, stocks, and sells electronic components to manufacturers, engineers, and hobbyists. |
| SparkFun Electronics | Allied Electronics | DigiKey Electronics | Arrow Electronics |
| Mouser Electronics | Adafruit | Newark | Chip One Stop |
Featured Datasheets
| Part Number | Description | MFRS |
| IRFU9310 | The function is Power MOSFET ( Transistor ). IRF | |
| IRFU9310 | The function is Power MOSFET ( Transistor ). Vishay Siliconix |  |
| IRFU9310PBF | The function is Power MOSFET ( Transistor ). International Rectifier |  |
Semiconductors commonly used in industry:
1N4148 |
BAW56 |
1N5400 |
NE555 | | ||
Quick jump to:
IRFU
1N4
2N2
2SA
2SC
74H
BC
HCF
IRF
KA | ||