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THN6301S fiches techniques PDF

ETC - NPN Planer RF TRANSISTOR

Numéro de référence THN6301S
Description NPN Planer RF TRANSISTOR
Fabricant ETC 
Logo ETC 





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THN6301S fiche technique
THN6301S
NPN Planer RF TRANSISTOR
DESCRIPTION
The THN6301S is a low Noise figure and good associated
gain performance at UHF,VHF and Microwave frequencies
It is suitable for a high density surface mount since
transistor has been SOT23 package
FEATURES
o Low Noise Figure
N.F = 1.1dB TYP. @ f=1GHz, VCE=8V, Ic=5mA
o High Gain
MAG = 16.5dB TYP. @ f=1GHz, VCE=8V, Ic=15mA
o High Transition Frequency
fT = 10GHz TYP. @ f=1GHz, VCE=8V, Ic=15mA
PIN CONFIGURATION
PIN NO SYMBOL DESCRIPTION
1 B Base
2 E Emitter
3 C Collector
MARKING : AA1
MAXIMUM RATINGS
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
Ic
PT
TSTG
TJ
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Total Power Dissipation
Storage Temperature
Operating Junction Temperature
CONDITION
Open Emitter
Open Base
Open Collector
Ts = 60
VALUE
25
12
2.5
65
150
-65 ~ 150
150
Unit
V
V
V
mA
mW
www.tachyonics.co.kr
- 1/10 -
Sep-2003
Rev 1.1

PagesPages 10
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