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PDF IRL2703 Data sheet ( Hoja de datos )
| Número de pieza | IRL2703 | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
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PD - 9.1359
PRELIMINARY
l Logic-Level Gate Drive
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
G
IRL2703
HEXFET® Power MOSFET
D
VDSS = 30V
RDS(on) = 0.04Ω
S ID = 24A
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
TO-220AB
Max.
24
17
96
45
0.30
±16
77
14
4.5
3.5
-55 to + 175
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Min.
––––
––––
––––
Typ.
––––
0.50
––––
Max.
3.3
––––
62
To Order
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
11/18/96
1 page  
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IRL2703
24
20
16
12
8
4
0A
25 50 75 100 125 150 175
TC , Case Temperature (°C )
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
VDS
VGS
RG
RD
D.U.T.
5.0V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
D = 0.50
1
0 .2 0
0.1 0
0.05
0.02
0 .0 1
0.1
S IN G L E P U LS E
(THERMA L RESP ONSE)
0.01
0.00001
0.0001
PD M
N o te s:
1. Duty factor D = t1 / t 2
t1
t2
2. Peak TJ = PD M x Z thJC + T C
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (se c)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
To Order
A
1
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRL2703.PDF ] | |
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