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Datasheet P9NB60FP-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
P9N Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | P9N70 | SSFP9N70 SSFP9N70
StarMOST Power MOSFET
■ Extremely high dv/dt capability ■ Low Gate Charge Qg results in
Simple Drive Requirement ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability
Description
StarMOS is a new generation of  Good-Ark data | | |
| 2 | P9NB50FP | STP9NB50FP
N-CHANNEL 500V - 0.75 Ω - 8.6 A TO-220/TO-220FP PowerMesh™ MOSFET
TYPE STP9NB50 STP9NB50FP
s s s s s
STP9NB50 STP9NB50FP
VDSS 500 V 500 V
RDS(on) < 0.85 Ω < 0.85 Ω
ID 8.6 A 4.9 A
TYPICAL RDS(on) = 0.75 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY L  STMicroelectronics data | | |
| 3 | P9NB60FP | STP9NB60FP ®
STP9NB60 STP9NB60FP
N - CHANNEL 600V - 0.7Ω - 9A TO-220/TO220FP PowerMESH™ MOSFET
TYPE ST P9NB60 ST P9NB60FP
s s s s s
V DSS 600 V 600 V
R DS(on) < 0.8 Ω < 0.8 Ω
ID 9.0 A 9.0 A
TYPICAL RDS(on) = 0.7 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACIT  ST Microelectronics data | | |
| 4 | P9NC60 | STP9NC60 N-CHANNEL 600V - 0.6Ω - 9A - TO-220/TO-220FP PowerMesh™II MOSFET
TYPE STP9NC60 STP9NC60FP
s s s s s
STP9NC60 STP9NC60FP
VDSS 600 V 600 V
RDS(on) < 0.75 Ω < 0.75 Ω
ID 9.0 A 9.0 A (*)
TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW H ST Microelectronics data | | |
| 5 | P9NC60FP | STP9NC60FP ®
STP9NC60 STP9NC60FP
N - CHANNEL 600V - 0.6Ω - 9A TO-220/TO-220FP PowerMESH™ ΙΙ MOSFET
T YPE
V DSS 600 V 600 V
R DS(on) < 0.75 Ω < 0.75 Ω
ID 9.0 A 5.2 A
STP9NC60 STP9NC60FP
ν ν ν ν ν
TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE STMicroelectronics data | | |
| 6 | P9NC65FP | STP9NC65FP
N-CHANNEL 650V - 0.75Ω - 8A TO-220/TO-220FP PowerMesh™II MOSFET
TYPE STP9NC65 STP9NC65FP
s s s s s
STP9NC65 STP9NC65FP
VDSS 650 V 650 V
RDS(on) < 0.90 Ω < 0.90 Ω
ID 8A 8A
TYPICAL RDS(on) = 0.75 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTA ST Microelectronics data | | |
| 7 | P9NK50Z | STP9NK50Z www.DataSheet.co.kr
STP9NK50Z - STP9NK50ZFP STB9NK50Z - STB9NK50Z-1
N-CHANNEL 500V - 0.72Ω - 7.2A TO-220/FP/D2PAK/I2PAK Zener-Protected SuperMESH™ MOSFET
TYPE STP9NK50Z STP9NK50ZFP STB9NK50Z STB9NK50Z-1
s s s s s s
VDSS 500 500 500 500 V V V V
RDS(on) < 0.85 Ω < 0.85 Ω < 0.85 Ω < 0.85 � STMicroelectronics data | |
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| Número de pieza | Descripción | Fabricantes | |
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