DataSheetWiki


ECN30601 fiches techniques PDF

Renesas Technology - High Voltage Monolithic IC

Numéro de référence ECN30601
Description High Voltage Monolithic IC
Fabricant Renesas Technology 
Logo Renesas Technology 





1 Page

No Preview Available !





ECN30601 fiche technique
ECN30601 Product Specification
HIGH-VOLTAGE MONOLITHIC IC
ECN30601
P1/13
<<Description>>
*Rated 500V/1.5A.
*Best for variable speed control of three-phase brush-less DC and induction motor at
AC 200 to 230V.
*High efficiency controlling with high voltage PWM operation is realized to energy
saving.
*Latch-up free monolithic IC realized by unique dielectric isolation technology.
*IGBT (Insulated Gate Bipolar Transistor) applied as 3-phase bridge output and free
wheeling diodes integrated.
*Circuits for over current and under voltage detection integrated.
*Easy designing of motor-integrated solution with single chip IC.
*Drive by high and low voltage power supply one for each.
*Terminal layout compatible with ECN3064.
<<Functions and Features>>
*Circuits for over current and VCC under voltage detection integrated.
*Power supplied for upper arm supplied by integrated charge pump circuit
*Constructs three-phase bridge output with six IGBTs and Free wheeling diodes.
*Six IGBTs can operate in 20kHz chopping frequency.
*PWM control possible with six inputs’ microprocessor control.
*Six logic inputs are compatible with 5V CMOS or LSTTL outputs.
PDE-30601-0
Relation No.:IC-SP-02023 R0

PagesPages 14
Télécharger [ ECN30601 ]


Fiche technique recommandé

No Description détaillée Fabricant
ECN30601 High Voltage Monolithic IC Renesas Technology
Renesas Technology

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche