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RN6006 fiches techniques PDF

Toshiba Semiconductor - TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

Numéro de référence RN6006
Description TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





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RN6006 fiche technique
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN6006
Motor Drive Circuit Applications
Power Amplifier Applications
Power Switching Applications
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Small flat package
l PC = 1~2W (mounted on ceramic substrate)
l Complementary to RN5006
Equivalent Circuit
RN6006
Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Collector-base voltage
VCBO
10
Collector-emitter voltage
VCEO
10
Emitter-base voltage
VEBO
6
Collector current
DC
Pulse (Note1)
IC
ICP
2
4
Base current
IB 0.4
Collector power dissipation
PC 500
Collector power dissipation
PC *
1000
Junction temperature
Tj 150
Storage temperature range
Tstg 55~150
Note: Pulse width =< 10ms, duty cycle <= 30 %
* : Mounterd on ceramic substrate (250mm2 ´ 0.8t)
JEDEC
JEITA
TOSHIBA
Weight: 0.05g (typ.)
SC-62
2-5K1A
Marking
Unit
V
V
V
A
A
mW
mW
°C
°C
1 2001-10-29

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