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Numéro de référence | RN6006 | ||
Description | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) | ||
Fabricant | Toshiba Semiconductor | ||
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1 Page
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN6006
Motor Drive Circuit Applications
Power Amplifier Applications
Power Switching Applications
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Small flat package
l PC = 1~2W (mounted on ceramic substrate)
l Complementary to RN5006
Equivalent Circuit
RN6006
Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Collector-base voltage
VCBO
−10
Collector-emitter voltage
VCEO
−10
Emitter-base voltage
VEBO
−6
Collector current
DC
Pulse (Note1)
IC
ICP
−2
−4
Base current
IB −0.4
Collector power dissipation
PC 500
Collector power dissipation
PC *
1000
Junction temperature
Tj 150
Storage temperature range
Tstg −55~150
Note: Pulse width =< 10ms, duty cycle <= 30 %
* : Mounterd on ceramic substrate (250mm2 ´ 0.8t)
JEDEC
JEITA
TOSHIBA
Weight: 0.05g (typ.)
―
SC-62
2-5K1A
Marking
Unit
V
V
V
A
A
mW
mW
°C
°C
1 2001-10-29
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Pages | Pages 3 | ||
Télécharger | [ RN6006 ] |
No | Description détaillée | Fabricant |
RN6001 | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) | Toshiba Semiconductor |
RN6002 | Motor Drive Circuit Applications | Toshiba Semiconductor |
RN6006 | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) | Toshiba Semiconductor |
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