(PDF) RF101L2S Datasheet - Fast recovery Diode

Número de pieza	RF101L2S
Descripción	Fast recovery Diode
Fabricantes	ROHM Semiconductor
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No Preview Available ! Diodes Fast recovery Diode RF101L2S RF101L2S zApplications High frequency rectification zFeatures 1) Small power mold type (PMDS) 2) Ultra low VF 3) Very fast recovery 4) Low switching loss zConstruction Silicon epitaxial planar zExternal dimensions (Unit : mm) 1.5±0.2 CATHODE MARK 12 34 2.6±0.2 0.1 +0.02 −0.1 2.0±0.2 ∗ 1 , 2 ···Type No. 3 , 4 ···Manufacturing date EX. RF101L2S EX. 2003,09 → → 6,6 3,9 zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Reverse voltage (repetitive peak) VRM Reverse voltage (DC) Average rectified forward current ∗ VR IO Forward peak surge current (60Hz 1cyc.) IFSM Junction temperature Tj Storage temperature Tstg ∗ Mounting on glass epoxi board Limits 200 200 1.0 20 150 −55 to +150 Unit V V A A °C °C zElectrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Symbol VF IR Reverse recovery time trr Note) ESD sensitive product handing required. Typ. 0.815 10n 12 Max. 0.870 10µ 25 Unit Conditions V IF=1.0A A VR=200V IF=0.5A nS IR=1.0A Irr=0.25 IR 1/2 1 page

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PDF RF101L2S Data sheet ( Hoja de datos )