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RF103L2S fiches techniques PDF

ROHM Semiconductor - Fast recovery Diode

Numéro de référence RF103L2S
Description Fast recovery Diode
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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RF103L2S fiche technique
Diodes
Fast recovery Diode
RF103L2S
RF103L2S
!Applications
High frequency rectification
!Features
1) Small power mold type (PMDS)
2) Ultra low VF
3) Very fast recovery
4) Low switching loss
!Construction
Silicon epitaxial planar
!External dimensions (Unit : mm)
1.5±0.2
CATHODE MARK
12
34
2.6±0.2
0.1
+0.02
0.1
2.0±0.2
1 , 2 ···Type No.
3 , 4 ···Manufacturing date
EX. RF101L2S
EX. 2003,09
6,6
3,9
!Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Reverse voltage (repetitive peak)
VRM
Reverse voltage (DC)
Average rectified forward current
VR
IO
Forward Peak surge current (60Hz 1cyc.) IFSM
Junction temperature
Tj
Storage temperature
Tstg
Mounting on glass epoxi board
Limits
200
200
1.0
20
150
40 to +150
Unit
V
V
A
A
°C
°C
!Electrical characteristics (Ta=25°C)
Parameter
Forward voltage
Reverse current
Symbol
VF
IR
Reverse recovery time
trr
Typ.
0.860
1.2
9
Max.
0.920
10
20
Unit Conditions
V IF=1.0A
µA VR=200V
IF=0.5A
nS IR=1.0A
Irr=0.25 IR
1/2

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