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PDF MBM29PDS322BE Data sheet ( Hoja de datos )
| Número de pieza | MBM29PDS322BE | |
| Descripción | 32M (2M x 16) BIT Page Dual Operation | |
| Fabricantes | Fujitsu Media Devices | |
| Logotipo |  |
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FUJITSU SEMICONDUCTOR
DATA SHEET
DS05-20889-1E
FLASH MEMORY
CMOS
32M (2M × 16) BIT Page Dual Operation
MBM29PDS322TE/BE 10/11
s DESCRIPTION
The MBM29PDS322TE/BE is 32M-bit, 1.8 V-only Flash memory organized as 2M words of 16 bits each. The
device is offered in 63-ball FBGA package. This device is designed to be programmed in system with standard
system 1.8 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The device can
also be reprogrammed in standard EPROM programmers.
The device is organized into two banks, Bank 1 and Bank 2, which can be considered to be two separate memory
arrays as far as certain operations are concerned. This device is the same as Fujitsu’s standard 1.8 V only Flash
memories with the additional capability of allowing a normal non-delayed read access from a non-busy bank of
the array while an embedded write (either a program or an erase) operation is simultaneously taking place on the
other bank.
s PRODUCT LINE-UP
(Continued)
Part No.
Ordering Part No.
VCC = 2.0 V
+0.2 V
–0.2 V
Max. Random Address Access Time (ns)
Max. Page Address Access Time (ns)
Max. CE Access Time (ns)
Max. OE Access Time (ns)
MBM29PDS322TE/BE
10 11
100 115
45 45
100 115
35 45
s PACKAGE
63-ball plastic FBGA
(BGA-63P-M01)
1 page  
MBM29PDS322TE/BE 10/11
s PIN ASSIGNMENT
A8
N.C.*
B8
N.C.*
(TOP VIEW)
(Marking Side)
L8
N.C.*
M8
N.C.*
A7 B7 C7 D7 E7 F7 G7 H7 J7 K7 L7 M7
N.C.* N.C.*
A13
A12
A14
A15
A16
N.C.
DQ15
VSS
N.C.* N.C.*
C6 D6 E6 F6 G6 H6 J6 K6
A9
A8
A10
A11
DQ7
DQ14
DQ13
DQ6
C5 D5 E5 F5 G5 H5 J5 K5
WE RESET N.C.
A19
DQ5
DQ12
VCC
DQ4
C4 D4 E4 F4 G4 H4 J4 K4
RY/BY WP/ACC A18
A20
DQ2
DQ10
DQ11
DQ3
C3 D3 E3 F3 G3 H3 J3 K3
A7 A17
A6
A5
DQ0
DQ8
DQ9
DQ1
A2
N.C.*
C2 D2 E2 F2 G2 H2 J2 K2 L2 M2
A3 A4 A2 A1 A0 CE OE VSS
N.C.* N.C.*
A1
N.C.*
B1
N.C.*
L1
N.C.*
M1
N.C.*
(BGA-63P-M01)
*: Peripheral balls on each corner are shorted together via the substrate but not connected to the die.
5
5 Page 
MBM29PDS322TE/BE 10/11
Table 5.1 MBM29PDS322TE Sector Group Protection Verify Autoselect Codes
Type
A20 to A12
A6
A3
A2
A1
A0 Code (HEX)
Manufacture’s Code
BA*2
VIL VIL VIL VIL VIL
04h
Device Code
Word
BA*2
VIL VIL VIL VIL VIH 227Eh
Extended Device Word
Code *3
Word
BA*2
BA*2
VIL VIH VIH VIH VIL 2206h
VIL VIH VIH VIH VIH 2201h
Sector Group Protection
Sector Group
Addresses
VIL
VIL
VIL
VIH
VIL
01h*1
*1:Outputs 01h at protected sector group addresses and outputs 00h at unprotected sector group addresses.
*2:When VID is applied, both Bank 1 and Bank 2 become Autoselect mode, which leads to the simultaneous operation
unable to be executed. Consequently, specifying the bank address is not demanded. However, the bank address
needs to be indicated when Autoselect mode is read out at command mode; because then it becomes OK to
activate simultaneous operation.
*3:A read cycle at address (BA)01h outputs device code. When 227Eh was output, this indicates that there will
require two additional codes, called Extended Device Codes. Therefore, the system may continue reading out
these Extended Device Codes at the address of (BA)0Eh, as well as at (BA)0Fh.
Type
Table 5.2 Expanded Autoselect Code Table
Code DQ15 DQ14 DQ13 DQ12 DQ11 DQ10 DQ9 DQ8 DQ7 DQ6 DQ5 DQ4 DQ3 DQ2 DQ1 DQ0
Manufacturer’s
Code
04h 0 0 0 0 0 0 0 0 0 0 0 0 0 1 0 0
Device Code (W) 227Eh 0 0 1 0 0 0 1 0 0 1 1 1 1 1 1 0
Extended
(W) 2206h 0 0 1 0 0 0 1 0 0 0 0 0 0 1 1 0
Device Code (W) 2201h 0 0 1 0 0 0 1 0 0 0 0 0 0 0 0 1
Sector Group
Protection
01h 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1
(W): Word mode
11
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