PDF MBM29DL640E Data sheet ( Hoja de datos )

Número de pieza	MBM29DL640E
Descripción	64 M (8 M X 8/4 M X 16) BIT Dual Operation
Fabricantes	Fujitsu Media Devices
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No Preview Available ! FUJITSU SEMICONDUCTOR DATA SHEET FLASH MEMORY CMOS 64 M (8 M × 8/4 M × 16) BIT Dual Operation MBM29DL640E80/90/12 DS05-20887-1E s DESCRIPTION The MBM29DL640E is a 64 M-bit, 3.0 V-only Flash memory organized as 8 Mbytes of 8 bits each or 4 Mwords of 16 bits each. The device is offered in 48-pin TSOP (I) and 63-ball FBGA packages. This device is designed to be programmed in system with 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The device can also be reprogrammed in standard EPROM programmers. The device is organized into four physical banks: Bank A, Bank B, Bank C and Bank D, which can be considered to be four separate memory arrays as far as certain operations are concerned. This device is the same as Fujitsu’s standard 3 V only Flash memories with the additional capability of allowing a normal non-delayed read access from a non-busy bank of the array while an embedded write (either a program or an erase) operation is simulta- neously taking place on the other bank. (Continued) s PRODUCT LINE UP Part No. Ordering Part No. VCC = 3.3 V +0.3 V −0.3 V VCC = 3.0 V +0.6 V −0.3 V Max. Address Access Time (ns) Max. CE Access Time (ns) Max. OE Access Time (ns) MBM29DL640E 80    90 12 80 90 120 80 90 120 30 35 50 s PACKAGES 48-pin plastic TSOP (I) Marking Side 48-pin plastic TSOP (I) 63-ball plastic FBGA (FPT-48P-M19) Marking Side (FPT-48P-M20) (BGA-63P-M02) 1 page s PIN ASSIGNMENTS A15 A14 A13 A12 A11 A10 A9 A8 A19 A20 WE RESET A21 WP/ACC RY/BY A18 A17 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 A1 A2 A3 A4 A5 A6 A7 A17 A18 RY/BY WP/ACC A21 RESET WE A20 A19 A8 A9 A10 A11 A12 A13 A14 A15 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 MBM29DL640E80/90/12 TSOP (I) (Marking Side) Standard Pinout (FPT-48P-M19) (Marking Side) Reverse Pinout (FPT-48P-M20) 48 A16 47 BYTE 46 VSS 45 DQ15/A-1 44 DQ7 43 DQ14 42 DQ6 41 DQ13 40 DQ5 39 DQ12 38 DQ4 37 VCC 36 DQ11 35 DQ3 34 DQ10 33 DQ2 32 DQ9 31 DQ1 30 DQ8 29 DQ0 28 OE 27 VSS 26 CE 25 A0 25 A0 26 CE 27 VSS 28 OE 29 DQ0 30 DQ8 31 DQ1 32 DQ9 33 DQ2 34 DQ10 35 DQ3 36 DQ11 37 VCC 38 DQ4 39 DQ12 40 DQ5 41 DQ13 42 DQ6 43 DQ14 44 DQ7 45 DQ15/A-1 46 VSS 47 BYTE 48 A16 (Continued) 5 5 Page MBM29DL640E80/90/12 Table 4 MBM29DL640E Command Definitions Command Sequence Bus Write Cy- cles Req’d First Bus Second Bus Write Cycle Write Cycle Addr. Data Addr. Data Third Bus Write Cycle Addr. Data Fourth Bus Read/Write Cycle Addr. Data Fifth Bus Write Cycle Addr. Data Sixth Bus Write Cycle Addr. Data Read/ Reset Word 1 XXXh F0h — — — — — — — — — — Byte Read/ Reset Word 555h 2AAh 555h 3 AAh 55h F0h RA RD — — — — Byte AAAh 555h AAAh Word 555h 2AAh (BA) 555h Autoselect 3 AAh 55h 90h — — — — — — Byte AAAh 555h (BA) AAAh Word 555h 2AAh 555h Program 4 AAh 55h A0h PA PD — — — — Byte AAAh 555h AAAh Program Suspend 1 BA B0h — — — — — — — — — — Program Resume 1 BA 30h — — — — — — — — — — Word 555h 2AAh 555h 555h 2AAh 555h Chip Erase 6 AAh 55h 80h AAh 55h 10h Byte AAAh 555h AAAh AAAh 555h AAAh Sector Erase Word 555h 2AAh 555h 555h 2AAh 6 AAh 55h 80h AAh 55h SA 30h Byte AAAh 555h AAAh AAAh 555h Erase Suspend 1 BA B0h — — — — — — — — — — Erase Resume 1 BA 30h — — — — — — — — — — Set to Word Fast Mode Byte 3 555h 2AAh 555h AAh 55h 20h AAAh 555h AAAh — — — — — — Fast Word Program 1 Byte 2 XXXh A0h PA XXXh PD — — — — — — — — Reset from Word Fast Mode 1 Byte 2 BA BA 90h XXXh XXXh 4 F0h — — — — — — — — Extended Sector Word Group 4 XXXh 60h SPA 60h SPA 40h SPA SD — — — — Protection Byte 2 Query Word (BA) 55h 1 98h — — — — — — — — — — Byte (BA) AAh (Continued) 11 11 Page

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Número de pieza	Descripción	Fabricantes
MBM29DL640E	64 M (8 M X 8/4 M X 16) BIT Dual Operation	Fujitsu Media Devices

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