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Numéro de référence | KM736V687 | ||
Description | 64Kx36-Bit Synchronous Burst SRAM | ||
Fabricant | Samsung Semiconductor | ||
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1 Page
KM736V687
PRELIMINARY
64Kx36 Synchronous SRAM
Document Title
64Kx36-Bit Synchronous Burst SRAM, 3.3V Power
Datasheets for 100TQFP
Revision History
Rev. No.
History
Rev. 0.0
Initial draft
Rev. 1.0
Final spec release
Draft Date
Nov. 02. 1996
May. 27. 1997
Remark
Preliminary
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
May 1997
Rev 1.0
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Pages | Pages 15 | ||
Télécharger | [ KM736V687 ] |
No | Description détaillée | Fabricant |
KM736V687 | 64Kx36-Bit Synchronous Burst SRAM | Samsung Semiconductor |
KM736V687A | 64Kx36-Bit Synchronous Burst SRAM | Samsung Semiconductor |
KM736V689 | 64Kx36-Bit Synchronous Pipelined Burst SRAM | Samsung Semiconductor |
KM736V689A | 64Kx36-Bit Synchronous Pipelined Burst SRAM | Samsung Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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