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IRFU12N25D fiches techniques PDF

International Rectifier - (IRFR12N25D / IRFU12N25D) SMPS MOSFET

Numéro de référence IRFU12N25D
Description (IRFR12N25D / IRFU12N25D) SMPS MOSFET
Fabricant International Rectifier 
Logo International Rectifier 





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IRFU12N25D fiche technique
PD - 94296A
SMPS MOSFET
IRFR12N25D
IRFU12N25D
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
VDSS
250V
RDS(on) max
0.26
ID
14A
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
D-Pak
I-Pak
IRFR12N25D IRFU12N25D
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
Notes  through … are on page 10
www.irf.com
Max.
14
9.7
56
144
0.96
± 30
9.3
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
V/ns
°C
Typ.
–––
–––
–––
Max.
1.04
50
110
Units
°C/W
1
09/21/01

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