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PDF DS2751 Data sheet ( Hoja de datos )

Número de pieza DS2751
Descripción Multichemistry Fuel Garge
Fabricantes Maxim Integrated Products 
Logotipo Maxim Integrated Products Logotipo



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No Preview Available ! DS2751 Hoja de datos, Descripción, Manual

www.maxim-ic.com
FEATURES
§ Available in Two Configurations
- Internal 25mW Sense Resistor
- External User-Selectable Sense Resistor
§ Current Measurement
- 12-Bit Bidirectional Measurement
- Internal Sense Resistor Configuration:
0.625mA LSB and ±1.9A Dynamic Range
- External Sense Resistor Configuration:
15.625mV LSB and ±64mV Dynamic
Range
§ Current Accumulation
- Internal Sense Resistor: 0.25mAhr LSB
- External Sense Resistor: 6.25mVhr LSB
§ Voltage Measurement with 4.88mV
Resolution
§ Temperature Measurement Using Integrated
Sensor with 0.125°C Resolution
§ 32 Bytes of Lockable EEPROM
§ 16 Bytes of General-Purpose SRAM
§ Dallas 1-Wire® Interface with Unique 64-Bit
Device Address
§ Supports 1-Cell Li+/Polymer or 3-Cell Ni
Battery Packs
§ 3mm Dimension of 8-Pin TSSOP Package
Allows Mounting on Side of Thin Li+ and
Li+/Polymer Cells (Lead Free available)
§ Low Power Consumption:
- Active Current: 60mA (typ), 90mA (max)
- Sleep Current: 1mA (typ), 2mA (max)
DS2751
Multichemistry Battery
Fuel Gauge
PIN CONFIGURATION
VIN
VSS
PIO
VDD
1
22
3
42
8 DQ
7 SNS
6 IS2
5 IS1
DS2751E
8-Pin TSSOP Package
(Lead Free Available)
PIN DESCRIPTION
VIN Voltage-Sense Input
VSS Device Ground
PIO Programmable I/O Pin
VDD Power-Supply Input (2.5V to 5.5V)
IS1 Current-Sense Input
IS2 Current-Sense Input
SNS Sense Resistor Connection
DQ Data Input/Output
1-Wire is a registered trademark of Dallas Semiconductor.
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DS2751 pdf
EEPROM RELIABILITY SPECIFICATION
(TA = 2.5V £ VDD £ 5.5V, -20°C to +70°C.)
PARAMETER
SYMBOL CONDITIONS
Copy to EEPROM Time
EEPROM Copy
Endurance
tEEC
NEEC
(Note 12)
DS2751
MIN
25,000
TYP
2
MAX
10
UNITS
ms
cycles
Note 1:
Note 2:
Note 3:
Note 4:
Note 5:
Note 6:
Note 7:
Note 8:
Note 9:
Note 10:
Note 11:
Note 12:
All voltages are referenced to VSS.
Operating VIN > 4.5V relative to VSS, or VIN > VDD + 0.3V can induce errors in voltage,
temperature, or current measurements.
Self heating due to output pin loading and sense resistor power dissipation can alter the
reading from ambient conditions.
Although the Voltage Register is large enough to report values larger than 4.75V, the internal
compensation for circuit variations can reduce the maximum reportable voltage to as low as
4.75V.
Voltage offset measurement is with respect to 4.35V at +25°C.
Internal current-sense resistor configuration.
External current-sense resistor configuration.
The Current Register supports measurement magnitudes up to 2.56A using the internal sense-
resistor option and 64mV with the external resistor option. Compensation of the internal
sense-resistor value for process and temperature variation may reduce the maximum
reportable magnitude to 1.9A.
Current offset error null to ±1 LSb typically requires a one time 3.5s in-system calibration by
user.
Current gain-error specification applies to gain error in converting the voltage difference at
IS1 and IS2, and excludes any error remaining after the DS2751 compensates for the internal
sense-resistor’s temperature coefficient of 3700ppm/°C to an accuracy of ±500ppm/°C. The
DS2751 does not compensate for external sense resistor characteristics, and any error terms
arising from the use of an external sense resistor should be taken into account when
calculating total current measurement error.
Typical value for tERR valid at 3.6V and +25°C.
Four year data retention at +70°C.
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DS2751 arduino
Table 3. MEMORY MAP
ADDRESS (HEX)
00
01
02 to 06
07
08
09 to 0B
0C
0D
0E
0F
DESCRIPTION
Reserved
Status Register
Reserved
EEPROM Register
Special Feature Register
Reserved
Voltage Register MSB
Voltage Register LSB
Current Register MSB
Current Register LSB
10
11
12 to 17
18
19
1A to 1F
20 to 2F
30 to 3F
40 to 7F
80 to 8F
90 to FF
Accumulated Current Register MSB
Accumulated Current Register LSB
Reserved
Temperature Register MSB
Temperature Register LSB
Reserved
EEPROM, block 0
EEPROM, block 1
Reserved
SRAM
Reserved
*Each EEPROM block is read/write until locked by the LOCK command, after which it is read-only.
DS2751
READ/WRITE
R
R/W
R/W
R
R
R
R
R/W
R/W
R
R
R/W*
R/W*
R/W
STATUS REGISTER
The default values for the Status Register bits are stored in lockable EEPROM in the corresponding bits
of address 31h. A Recall Data command for EEPROM block 1 recalls the default values into the Status
Register bits. The format of the Status Register is shown in Figure 8. The function of each bit is described
in detail in the following paragraphs.
Figure 8. STATUS REGISTER FORMAT
Address 01
bit 7 bit 6 bit 5 bit 4 bit 3 bit 2 bit 1 bit 0
X X PMOD RNAOP UVEN X X X
PMOD—Sleep Mode Enable. A value of 1 in this bit enables the DS2751 to enter sleep mode when the
DQ line goes low for greater than tSLEEP. A value of 0 disables the DS2751 from entering the sleep mode.
This bit is read-only. The desired default value should be set in bit 5 of address 31h. The factory default
is 0.
RNAOP—Read Net Address Opcode. A value of 0 in this bit sets the opcode for the Read Net Address
command to 33h, while a 1 sets the opcode to 39h. This bit is read-only. The desired default value should
be set in bit 4 of address 31h. The factory default is 0.
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