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PDF IRFU3411PBF Data sheet ( Hoja de datos )
| Número de pieza | IRFU3411PBF | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
Description
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs
are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide
variety of applications.
G
The D-Pak is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The
straight lead, I-Pak, version (IRFU series) is for through-
hole mounting applications. Power dissipation levels up
to 1.5 watts are possible in typical surface mount
applications.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
www.irf.com
PD - 95371A
IRFR3411PbF
IRFU3411PbF
HEXFET® Power MOSFET
D
VDSS = 100V
RDS(on) = 44mΩ
ID = 32A
S
D-Pak
IRFR3411
I-Pak
IRFU3411
Max.
32
23
110
130
0.83
± 20
16
13
7.0
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
A
mJ
V/ns
°C
Typ.
–––
–––
–––
Max.
1.2
50
110
Units
°C/W
1
12/03/04
1 page  
35
30
25
20
15
10
5
0
25
50 75 100
TC , Case Temperature
125 150
( ° C)
175
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
IRFR/U3411PbF
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.10
0.1 0.05
0.02
0.01
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
0.01
t1, Rectangular Pulse Duration (sec)
P DM
t1
t2
Notes:
1. Duty factor D =
t1/ t 2
2. Peak T J = P DM x Z thJC + T C
0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
1
5
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| PDF Descargar | [ Datasheet IRFU3411PBF.PDF ] | |
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