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International Rectifier - SMPS MOSFET

Numéro de référence IRFU3412
Description SMPS MOSFET
Fabricant International Rectifier 
Logo International Rectifier 





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IRFU3412 fiche technique
PD - 94373
IRFR3412
SMPS MOSFET
Applications
l Switch Mode Power Supply (SMPS)
l Motor Drive
l Bridge Converters
l All Zero Voltage Switching
VDSS
100V
IRFU3412
HEXFET® Power MOSFET
RDS(on) max
0.025
ID
48A†
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
l Enhanced Body Diode dv/dt Capability
D-Pak
IRFR3412
I-Pak
IRFU3412
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 second
Mounting torqe, 6-32 or M3 screw
Max.
48†
34†
190
140
0.95
± 20
6.4
-55 to + 175
300(1.6mm from case )
10 lbfin (1.1Nm)
Units
A
W
W/°C
V
V/ns
°C
Diode Characteristics
Symbol
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD
trr
Qrr
IRRM
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Reverse RecoveryCurrent
Forward Turn-On Time
www.irf.com
Min. Typ. Max. Units
Conditions
––– ––– 48†
A
MOSFET symbol
showing the
integral reverse
––– ––– 190
p-n junction diode.
G
D
S
––– ––– 1.3 V TJ = 25°C, IS = 29A, VGS = 0V „
––– 68 100 ns TJ = 125°C, IF = 29A
––– 160 240 nC di/dt = 100A/µs „
––– 4.5 6.8 A
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
1
1/22/02

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