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RB160M-90 fiches techniques PDF

ROHM Semiconductor - Schottky barrier diode

Numéro de référence RB160M-90
Description Schottky barrier diode
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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RB160M-90 fiche technique
Diodes
Schottky barrier diode
RB160M-90
RB160M-90
zApplications
General rectification
z External dimensions (Unit : mm)
1.6±0.1
0.15±0.03
zFeatures
1) Small power mold type. (PMDU)
2) Low IR
3) High reliability.
0.9±0.1
0~0.1
0.8±0.1
zConstruction
Silicon epitaxial planar
ROHM : PMDU
JEDEC : SOD-123
Manufacture Date
z Land size figure (Unit : mm)
1.2
PMDU
zStructure
z Taping specifications (Unit : mm)
4.0±0.1 2.0±0.05
φ1.55±0.1
      0.05
0.25±0.05
1.81±0.05
zAbsolute maximum ratings (Ta=25°C)
Param eter
Revers e voltage (repetitive peak)
Revers e voltagec(DC)
Average rectified forward current
Forward current s urge peak 60Hz1cyc
Junction tem perature
Storage tem perature
Mounted on epoxy board. 180°Harf s ine wave
Sym bol
VRM
VR
Io
IFSM
Tj
Ts tg
4.0±0.1
φ1.0±0.2
     0
Lim its
90
90
1
30
150
-40 to +150
Unit
V
V
A
A
1.05±0.1
zElectrical characteristics (Ta=25°C)
Param eter
Forward voltage
Revers e current
Sym bol Min. Typ. Max.
VF - - 0.73
IR - - 100
Unit
V IF=1.0A
µA VR=90V
C o n d i ti o n s
1/3

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