|
|
PDF M470T2953Bxx Data sheet ( Hoja de datos )
| Número de pieza | M470T2953Bxx | |
| Descripción | 200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC | |
| Fabricantes | Samsung semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de M470T2953Bxx (archivo pdf) en la parte inferior de esta página. Total 19 Páginas | ||
|
No Preview Available !
256MB, 512MB, 1GB Unbuffered SODIMMs
DDR2 SDRAM
DDR2 Unbuffered SODIMM
200pin Unbuffered SODIMM based on 512Mb B-die
64bit Non-ECC
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL
INFORMATION IN THIS DOCUMENT IS PROVIDED
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.
1. For updates or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar
applications where Product failure couldresult in loss of life or personal or physical harm, or any military or
defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice.
Rev. 1.5 Aug. 2005
1 page  
256MB, 512MB, 1GB Unbuffered SODIMMs
DDR2 SDRAM
Functional Block Diagram: 512MB, 64Mx64 Module(Populated as 2 rank of x16 DDR2 SDRAMs)
M470T6554BG(Z)3/M470T6554BG(Z)0
ODT1
ODT0
CKE1
CKE0
S1
S0
3Ω + 5%
DQS0
DQS0
DM0
DQS1
DQS1
DM1
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
LDQS
LDQS
LDM
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
UDQS
UDQS
UDM
I/O 8
I/O 9
I/O 10
I/O 11
I/O 12
I/O 13
I/O 14
I/O 15
CS C
K
E
D0
O
D
T
LDQS
LDQS
LDM
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
UDQS
UDQS
UDM
I/O 8
I/O 9
I/O 10
I/O 11
I/O 12
I/O 13
I/O 14
I/O 15
CS C
K
E
D4
O
D
T
DQS4
DQS4
DM4
DQS5
DQS5
DM5
DQ32
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
DQ39
DQ40
DQ41
DQ42
DQ43
DQ44
DQ45
DQ46
DQ47
LDQS
LDQS
LDM
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
UDQS
UDQS
UDM
I/O 8
I/O 9
I/O 10
I/O 11
I/O 12
I/O 13
I/O 14
I/O 15
CS C
K
E
D2
O
D
T
LDQS
LDQS
LDM
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
UDQS
UDQS
UDM
I/O 8
I/O 9
I/O 10
I/O 11
I/O 12
I/O 13
I/O 14
I/O 15
CS C
K
E
D6
O
D
T
DQS2
DQS2
DM2
DQS3
DQS3
DM3
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
LDQS
LDQS
LDM
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
UDQS
UDQS
UDM
I/O 8
I/O 9
I/O 10
I/O 11
I/O 12
I/O 13
I/O 14
I/O 15
CS C
K
E
D1
O
D
T
LDQS
LDQS
LDM
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
UDQS
UDQS
UDM
I/O 8
I/O 9
I/O 10
I/O 11
I/O 12
I/O 13
I/O 14
I/O 15
CS C
K
E
D5
O
D
T
DQS6
DQS6
DM6
DQS7
DQS7
DM7
DQ48
DQ49
DQ50
DQ51
DQ52
DQ53
DQ54
DQ55
DQ56
DQ57
DQ58
DQ59
DQ60
DQ61
DQ62
DQ63
LDQS
LDQS
LDM
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
UDQS
UDQS
UDM
I/O 8
I/O 9
I/O 10
I/O 11
I/O 12
I/O 13
I/O 14
I/O 15
CS C
K
E
D3
O
D
T
LDQS
LDQS
LDM
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
UDQS
UDQS
UDM
I/O 8
I/O 9
I/O 10
I/O 11
I/O 12
I/O 13
I/O 14
I/O 15
CS C
K
E
D7
O
D
T
BA0 - BA1
A0 - A13
RAS
CAS
WE
3Ω + 5%
DDR2 SDRAMs D0 - D7
DDR2 SDRAMs D0 - D7
DDR2 SDRAMs D0 - D7
DDR2 SDRAMs D0 - D7
DDR2 SDRAMs D0 - D7
SCL SCL
SA0
SA1
A0
A1
SPD
A2 WP
VDDSPD
VREF
VDD
VSS
Serial PD
DDR2 SDRAMs D0 - D7
DDR2 SDRAMs D0 - D7, VDD and VDDQ
DDR2 SDRAMs D0 - D7, SPD
SDA
* Clock Wiring
Clock Input DDR2 SDRAMs
*CK0/CK0 4 DDR2 SDRAMs
*CK1/CK1 4 DDR2 SDRAMs
* Wire per Clock Loading
Table/Wiring Diagrams
Notes :
1. DQ,DM, DQS/DQS resistors : 22 Ohms ± 5%.
2. BAx, Ax, RAS, CAS, WE resistors : 3.0 Ohms ± 5%.
Rev. 1.5 Aug. 2005
5 Page 
256MB, 512MB, 1GB Unbuffered SODIMMs
DDR2 SDRAM
Operating Current Table(1-1) (TA=0oC, VDD= 1.9V)
M470T6554BG(Z)3/M470T6554BG(Z)0 : 64Mx64 512MB Module
Symbol
IDD0
IDD1
IDD2P
IDD2Q
IDD2N
IDD3P-F
IDD3P-S
IDD3N
IDD4W
IDD4R
IDD5B
IDD6
IDD7
CD5
(DDR533@CL=4)
760
860
64
200
240
240
120
560
1,200
1,100
1,060
44
1,840
LD5
(DDR533@CL=4)
460
560
64
200
200
120
120
260
700
700
860
40
1,060
CCC
(DDR400@CL=3)
720
760
64
200
240
240
120
520
1,000
940
1,000
44
1,760
LCC
(DDR400@CL=3)
460
520
64
200
200
120
120
260
700
700
860
40
1,060
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Notes
M470T3354BG(Z)3/M470T3354BG(Z)0 : 32Mx64 256MB Module
Symbol
IDD0
IDD1
IDD2P
IDD2Q
IDD2N
IDD3P-F
IDD3P-S
IDD3N
IDD4W
IDD4R
IDD5B
IDD6
IDD7
CD5
(DDR533@CL=4)
480
580
32
100
120
120
60
280
920
820
780
22
1,560
LD5
(DDR533@CL=4)
360
460
32
100
100
60
60
160
600
600
760
20
960
CCC
(DDR400@CL=3)
460
500
32
100
120
120
60
260
740
680
740
22
1,500
LCC
(DDR400@CL=3)
360
420
32
100
100
60
60
160
520
520
760
20
960
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Notes
Rev. 1.5 Aug. 2005
11 Page | ||
| Páginas | Total 19 Páginas | |
| PDF Descargar | [ Datasheet M470T2953Bxx.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| M470T2953Bxx | 200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC | Samsung semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |