|
|
Datasheet IKW15T120-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
IKW Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | IKW03N120H2 | HighSpeed 2-Technology IKP03N120H2, IKW03N120H2
IKB03N120H2
HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
• Designed for: - SMPS - Lamp Ballast - ZVS-Converter 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - t  Infineon Technologies data | | |
| 2 | IKW08T120 | IGBT, Insulated Gate Bipolar Transistor TrenchStop® Series
IKW08T120
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft,
fast recovery anti-parallel Emitter Controlled HE diode
C
Approx. 1.0V reduced VCE(sat) and 0.5V reduced VF compared to BUP305D
Short circuit withstand time – 10s
Designed Infineon Technologies igbt | | |
| 3 | IKW15N120H3 | IGBT, Insulated Gate Bipolar Transistor IGBT
HighspeedDuoPack:IGBTinTrenchandFieldstoptechnologywithsoft,fastrecovery anti-paralleldiode
IKW15N120H3
1200Vhighspeedswitchingseriesthirdgeneration
Datasheet
IndustrialPowerControl
IKW15N120H3
Highspeedswitchingseriesthirdgeneration
HighspeedDuoPack:IGBTinTre  Infineon igbt | | |
| 4 | IKW15N120T2 | IGBT, Insulated Gate Bipolar Transistor IKW15N120T2
TrenchStop® 2nd generation Series
Low Loss DuoPack : IGBT in 2nd generation TrenchStop® technology
with soft, fast recovery anti-parallel Emitter Controlled Diode
C
Short circuit withstand time – 10s
Designed for :
- Frequency Converters
- Uninterrupted Power Supply Infineon igbt | | |
| 5 | IKW15T120 | LOW LOSS DUOPACK : IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY WITH SOFT/FAST RECOVERY ANTI-PARALLEL EMCON HE DIODE Infineon Technologies igbt | | |
| 6 | IKW20N60H3 | IGBT, Insulated Gate Bipolar Transistor IGBT
HighspeedDuoPack:IGBTinTrenchandFieldstoptechnology withsoft,fastrecoveryanti-paralleldiode
IKW20N60H3
600Vhighspeedswitchingseriesthirdgeneration
Datasheet
IndustrialPowerControl
IKW20N60H3
Highspeedswitchingseriesthirdgeneration
HighspeedDuoPack:IGBTinTrench Infineon Technologies igbt | | |
| 7 | IKW20N60T | IGBT, Insulated Gate Bipolar Transistor IKW20N60T
TRENCHSTOP™ Series
Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
Features:
Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time 5s
Designed Infineon Technologies igbt | |
| Esta página es del resultado de búsqueda del IKW15T120-PDF.HTML. Si pulsa el resultado de búsqueda de IKW15T120-PDF.HTML se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |