(PDF) IRFY340 Datasheet - N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS

Número de pieza	IRFY340
Descripción	N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS
Fabricantes	Seme LAB
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No Preview Available ! IRFY340 MECHANICAL DATA Dimensions in mm (inches) 10.41 10.67 0.70 0.90 4.70 5.00 3.56 3.81 Dia. 123 2.54 BSC 2.65 2.75 0.89 1.14 TO–220M – Metal Package Pad 1 – Gate Pad 2 – Drain Pad 3 – Source N–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS VDSS ID(cont) RDS(on) 400V 6.9A 0.55Ω FEATURES • HERMETICALLY SEALED TO–220 METAL PACKAGE • SIMPLE DRIVE REQUIREMENTS • LIGHTWEIGHT • SCREENING OPTIONS AVAILABLE • ALL LEADS ISOLATED FROM CASE ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS Gate – Source Voltage ±20V ID Continuous Drain Current (VGS = 0 , Tcase = 25°C) 6.9A ID Continuous Drain Current (VGS = 0 , Tcase = 100°C) 4.4A IDM Pulsed Drain Current 1 27A PD Power Dissipation @ Tcase = 25°C 60W Linear Derating Factor 0.48W/°C TJ , Tstg TL RθJC Operating and Storage Temperature Range Package Mounting Surface Temperature (for 5 sec) Thermal Resistance Junction to Case –55 to 150°C 300°C 2.1°C/W max. Notes 1) Pulse Test: Pulse Width ≤ 300ms, δ ≤ 2% Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 5/98 1 page

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PDF IRFY340 Data sheet ( Hoja de datos )