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PDF IRFBA31N50L Data sheet ( Hoja de datos )
| Número de pieza | IRFBA31N50L | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD- 93925
PROVISIONAL IRFBA31N50L
SMPS MOSFET
Applications
l Telecom and Data-Com off-Line SMPS
l Motor Control
l UninterruptIble Power Supply
Benefits
l Low On-Resistance
l High Speed Switching
l Low Gate Drive Current Due to Improved
Gate Charge Characteristics
l Built in Fast Recovery Diode
l Improved Avalanche Ruggedness and
Dynamic dv/dt, Fully Characterized
Avalanche Voltage and Current
VDSS
500V
HEXFET® Power MOSFET
RDS(on)
0.152Ω
ID
31A
Super-220™
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case )
Recommended clip force
Max.
31
19
124
360
2.9
± 30
5.0
-55 to + 150
300
20
Units
A
W
W/°C
V
V/ns
°C
N
Diode Characteristics
Symbol
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 31
MOSFET symbol
A showing the
integral reverse
––– ––– 124
p-n junction diode.
G
D
S
––– ––– 1.5 V TJ = 25°C, IS = 31A, VGS = 0V
––– 180 ––– ns TJ = 125°C, IF = 31A
––– 800 ––– nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Typical SMPS Topologies
l Zero Voltage Switching Full and Half Bridge Circuits
www.irf.com
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| PDF Descargar | [ Datasheet IRFBA31N50L.PDF ] | |
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| Número de pieza | Descripción | Fabricantes |
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