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PDF IPD03N03LB Data sheet ( Hoja de datos )
| Número de pieza | IPD03N03LB | |
| Descripción | OptiMOS 2 Power-Transistor | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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OptiMOS®2 Power-Transistor
Features
• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC1) for target applications
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Superior thermal resistance
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
Product Summary
V DS
R DS(on),max
ID
IPD03N03LB G
30 V
3.3 mΩ
90 A
PG-TO252-3-11
Type
IPD03N03LB G
Package
P-TO252-3-11
Ordering Code
Q67042-S4260
Marking
03N03LB
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C2)
T C=100 °C
Pulsed drain current
I D,pulse T C=25 °C3)
Avalanche energy, single pulse
E AS I D=90 A, R GS=25 Ω
Reverse diode dv /dt
dv /dt
I D=90 A, V DS=20 V,
di /dt =200 A/µs,
T j,max=175 °C
Gate source voltage4)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Rev. 1.11
page 1
Value
90
90
360
240
6
±20
115
-55 ... 175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
2004-12-16
1 page  
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
200
180
10 V 4.5 V
4.1 V
160
140
3.8 V
120
100
3.5 V
80
60
40
20
0
0
3.2 V
3V
2.8 V
12
V DS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
200
180
160
140
120
100
80
60
40
175 °C
20 25 °C
0
01234
V GS [V]
IPD03N03LB G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
12
3V
10
3.2 V
3.5 V
8
6 3.8 V
4.1 V
4 4.5 V
10 V
2
0
3 0 20 40 60
I D [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
80
100
180
160
140
120
100
80
60
40
20
0
5 0 20 40 60 80 100
I D [A]
Rev. 1.11
page 5
2004-12-16
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IPD03N03LB.PDF ] | |
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