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PDF FDQ7238S Data sheet ( Hoja de datos )
| Número de pieza | FDQ7238S | |
| Descripción | Dual Notebook Power Supply N-Channel PowerTrench in SO-14 Package | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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September 2003
FDQ7238S
Dual Notebook Power Supply N-Channel PowerTrench in SO-14 Package
General Description
The FDQ7238S is designed to replace two single SO-8
MOSFETs in DC to DC power supplies. The high-side
switch (Q1) is designed with specific emphasis on
reducing switching losses while the low-side switch
(Q2) is optimized to reduce conduction losses using
Fairchild’s SyncFET TM technology.
Features
• Q2: 14 A, 30V. RDS(on) = 9.5 mΩ @ VGS = 10V
RDS(on) = 10.5 mΩ @ VGS = 4.5V
• Q1: 11 A, 30V. RDS(on) = 14.5 mΩ @ VGS = 10V
RDS(on) = 16 mΩ @ VGS = 4.5V
SO-14
pin 1
S2
S2S2
G1G2
Vin
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
TJ, TSTG
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a & 1b)
(Note 1c & 1d)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a & 1b)
(Note 1c & 1d)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDQ7238S
FDQ7238S
13”
Q2 Q1
30 30
±16 ±16
14 11
50 50
2.4 1.8
1.3 1.1
−55 to +150
52 68
94 118
Units
V
V
A
W
°C
°C/W
Tape width
16mm
Quantity
2500 units
©2003 Fairchild Semiconductor Corporation
FDQ7238S Rev A1 (W)
1 page  
Typical Characteristics : Q2
10
ID = 14A
8
6
4
2
0
0 10
VDS = 10V
20V
20 30
Qg, GATE CHARGE (nC)
40
15V
50
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1
100us
1ms
10ms
100ms
1s
10s
DC
0.1
VGS = 10V
SINGLE PULSE
RθJA = 94oC/W
TA = 25oC
0.01
0.01
0.1 1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
4000
3200
2400
1600
800
0
0
CISS
f = 1MHz
VGS = 0 V
COSS
CRSS
5 10 15 20 25
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
RθJA = 94°C/W
40 TA = 25°C
30
20
10
0
0.01
0.1
1 10
t1, TIME (sec)
100 1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.001
0.0001
SINGLE PULSE
0.001
0.01
0.1
t1, TIME (sec)
1
10
Figure 11. Transient Thermal Response Curve.
RθJA(t) = r(t) * RθJA
RθJA = 94 °C/W
P(pk
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
100
Thermal characterization performed using the conditions described in Note 1d.
Transient thermal response will change depending on the circuit board design
1000
FDQ7238S Rev A1 (W)
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FDQ7238S.PDF ] | |
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