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PDF FDP8880 Data sheet ( Hoja de datos )
| Número de pieza | FDP8880 | |
| Descripción | N-Channel PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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May 2008
FDP8880 / FDB8880
N-Channel PowerTrench® MOSFET
tmM
30V, 54A, 11.6mΩ
Features
rDS(ON) = 14.5mΩ, VGS = 4.5V, ID = 40A
rDS(ON) = 11.6mΩ, VGS = 10V, ID = 40A
High performance trench technology for extremely low
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
rDS(ON) and fast switching speed.
rDS(ON)
Low gate charge
High power and current handling capability
Application
DC / DC Converters
RoHS Complicant
GATE
DRAIN
(FLANGE)
SOURCE
TO-263AB
FDB SERIES
(FLANGE)
DRAIN
TO-220AB
FDP SERIES
SOURCE
DRAIN
GATE
G
D
S
©2008 Fairchild Semiconductor Corporation
FDP8880 / FDB8880 Rev. A1
1
www.fairchildsemicom
1 page  
Typical Characteristics TC = 25°C unless otherwise noted
400 500
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
100
10µs
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
100µs
100
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
1
1ms
10ms
SINGLE PULSE
TJ = MAX RATED
TC = 25oC
DC
0.1
1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
40
Figure 5. Forward Bias Safe Operating Area
STARTING TJ = 25oC
10
STARTING TJ = 150oC
1
0.001
0.01
0.1
1
10
tAV, TIME IN AVALANCHE (ms)
100
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
80
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDD = 15V
60
40
TJ = 175oC
20 TJ = 25oC
TJ = -55oC
0
1.5 2.0
2.5 3.0
3.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
4.0
160
VGS = 4.5V
120
VGS = 10V
80
40
VGS = 3.5V
VGS = 3V
TC = 25oC
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VGS = 2.5V
0
0 0.25 0.5 0.75
VDS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
1.0
20
ID = 54A
16
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
12
ID = 5A
8
2468
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 9. Drain to Source On Resistance vs Gate
Voltage and Drain Current
1.7
1.53
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
1.36
1.19
1.02
0.85
0.7
-80
VGS = 10V, ID = 54A
-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
©2008 Fairchild Semiconductor Corporation
FDP8880 / FDB8880 Rev. A1
5
www.fairchildsemicom
5 Page 
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global
subsidianries, and is not intended to be an exhaustive list of all such trademarks.
ACEx®
FPS™
PDP-SPM™
The Power Franchise®
Build it Now™
CorePLUS™
F-PFS™
FRFET®
Power-SPM™
PowerTrench®
tm
CorePOWER™
CROSSVOLT™
CTL™
Global Power ResourceSM
Green FPS™
Green FPS™ e-Series™
Programmable Active Droop™
QFET®
QS™
TinyBoost™
TinyBuck™
TinyLogic®
Current Transfer Logic™
EcoSPARK®
GTO™
IntelliMAX™
Quiet Series™
RapidConfigure™
TINYOPTO™
TinyPower™
EfficentMax™
ISOPLANAR™
Saving our world 1mW at a time™ TinyPWM™
EZSWITCH™ *
™
®
Fairchild®
Fairchild Semiconductor®
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
SmartMax™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
TinyWire™
µSerDes™
UHC®
Ultra FRFET™
FACT Quiet Series™
FACT®
FAST®
FastvCore™
FlashWriter® *
Motion-SPM™
OPTOLOGIC®
OPTOPLANAR®
®
tm
SuperSOT™-6
SuperSOT™-8
SuperMOS™
®
UniFET™
VCX™
VisualMax™
* EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body or (b)
support or sustain life, and (c) whose failure to perform when
properly used in accordance with instructions for use provided
in the labeling, can be reasonably expected to result in a
significant injury of the user.
2. A critical component in any component of a life support,
device, or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative or In Design
Preliminary
First Production
No Identification Needed Full Production
Obsolete
Not In Production
Definition
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
This datasheet contains preliminary data; supplementary data will be pub-
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve the design.
This datasheet contains specifications on a product that is discontinued by
Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I34
@2008 Fairchild Semiconductor Corporation
FDP8880 / FDB8880 Rev.A1
WWW. fairchildsemicom
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