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PDF IGB03N120H2 Data sheet ( Hoja de datos )
| Número de pieza | IGB03N120H2 | |
| Descripción | HighSpeed 2-Technology | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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IGP03N120H2,
IGW03N120H2
IGB03N120H2
HighSpeed 2-Technology
• Designed for:
- SMPS
- Lamp Ballast
- ZVS-Converter
- optimised for soft-switching / resonant topologies
• 2nd generation HighSpeed-Technology
for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
- Eoff optimized for IC =3A
P-TO-220-3-1
(TO-220AB)
C
G
E
P-TO-263-3-2 (D²-PAK)
(TO-263AB)
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
P-TO-247-3-1
(TO-247AC)
Type
VCE
IC
Eoff
Tj Package
Ordering Code
IGW03N120H2 1200V 3A 0.15mJ 150°C P-TO-247
Q67040-S4596
IGP03N120H2 1200V 3A 0.15mJ 150°C P-TO-220-3-1
Q67040-S4599
IGB03N120H2 1200V 3A 0.15mJ 150°C P-TO-263 (D2PAK) Q67040-S4598
Maximum Ratings
Parameter
Collector-emitter voltage
Triangular collector current
TC = 25°C, f = 140kHz
TC = 100°C, f = 140kHz
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE ≤ 1200V, Tj ≤ 150°C
Gate-emitter voltage
Power dissipation
TC = 25°C
Operating junction and storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
VGE
Ptot
Tj , Tstg
-
Value
1200
9.6
3.9
9.9
9.9
Unit
V
A
±20 V
62.5 W
-40...+150
260
225 (for SMD)
°C
Power Semiconductors
1
Rev. 2, Mar-04
1 page  
IGP03N120H2,
IGW03N120H2
IGB03N120H2
10A
8A
VGE=15V
12V
6A 10V
8V
6V
4A
2A
0A
0V 1V 2V 3V 4V 5V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics
(Tj = 25°C)
12A
10A
8A Tj=+150°C
6A Tj=+25°C
4A
2A
0A
3V 5V 7V 9V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristics
(VCE = 20V)
10A
9A
8A
7A VGE=15V
6A
12V
10V
5A
8V
6V
4A
3A
2A
1A
0A
0V 1V 2V 3V 4V 5V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristics
(Tj = 150°C)
3V
IC=6A
IC=3A
2V
IC=1.5A
1V
0V
-50°C 0°C 50°C 100°C 150°C
Tj, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(VGE = 15V)
Power Semiconductors
5
Rev. 2, Mar-04
5 Page 
IGP03N120H2,
IGW03N120H2
IGB03N120H2
TO-247AC
dimensions
symbol
[mm]
symbol
min min
A 4.78 A 4.78 A
B 2.29 B 2.29 B
C 1.78 C 1.78 C
D 1.09 D 1.09 D
E 1.73
E
F 2.67 F 2.67 F
G 0.76 max G 0.76 max G
H 20.80 H 20.80 H
K 15.65 K 15.65 K
L 5.21 L 5.21 L
M 19.81 M 19.81 M
N 3.560 N 3.560 N
∅P 3.61 ∅P 3.61 ∅P
Q 6.12 Q 6.12 Q
dimensi
ons
dimensi
ons
symbol [mm] symbol [mm] symbol
min min
Power Semiconductors
11
Rev. 2, Mar-04
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet IGB03N120H2.PDF ] | |
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