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PDF IRFP244 Data sheet ( Hoja de datos )
| Número de pieza | IRFP244 | |
| Descripción | (IRFP244 / IRFP245 / IRFP246 / IRFP247) N-Channel Power MOSFETs | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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Semiconductor
July 1998
IRFP244, IRFP245,
IRFP246, IRFP247
15A and 14A, 275V and 250V, 0.28 and 0.34 Ohm,
N-Channel Power MOSFETs
Features
• 15A and 14A, 275V and 250V
• rDS(ON) = 0.28Ω and 0.34Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• 275V, 250VDC Rated, 120VAC Line System Operation
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver-
tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.
Formerly developmental type TA17423.
Symbol
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFP244
TO-247
IRFP244
IRFP245
TO-247
IRFP245
IRFP246
TO-247
IRFP246
IRFP247
TO-247
IRFP247
NOTE: When ordering, include the entire part number.
D
G
S
Packaging
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1998
5-1
File Number 2211.2
1 page  
IRFP244, IRFP245, IRFP246, IRFP247
Typical Performance Curves Unless Otherwise Specified (Continued)
25
PULSE DURATION = 80µs
VGS = 10V
20
VGS = 6.0V
15
VGS = 5.5V
10
VGS = 5.0V
5
VGS = 4.5V
VGS = 4.0V
0
0 2 46 8
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 6. SATURATION CHARACTERISTICS
10
100
VDS ≥ 50V
PULSE DURATION = 80µs
10
TJ = 150oC
TJ = 25oC
1
0.1
0
2468
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
10
2.5
PULSE DURATION = 80µs
2.0
1.5
VGS = 10V
3.0
ID = 10A
VGS = 10V
2.4
1.8
1.0 1.2
0.5
VGS = 20V
0.6
0
0 15 30 45 60 75
ID, DRAIN CURRENT (A)
NOTE: Heating effect of 2µs pulse is minimal.
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
1.25
ID = 250µA
1.15
1.05
3000
2400
1800
CISS
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
0.95
0.85
0.75
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
1200
COSS
600 CRSS
0
1 10 100
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
5-5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IRFP244.PDF ] | |
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