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PDF 2SC6023 Data sheet ( Hoja de datos )
| Número de pieza | 2SC6023 | |
| Descripción | NPN Epitaxial Planar Silicon Transistor UHF to C Band Low-Noise Amplifier and OSC Applications | |
| Fabricantes | Sanyo Semicon Device | |
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Ordering number : ENN8143
2SC6023
2SC6023
NPN Epitaxial Planar Silicon Transistor
UHF to C Band Low-Noise Amplifier
and OSC Applications
Features
• Low-noise use
: NF=1.2dB typ (f=2GHz).
• High cut-off frequency : fT=14.5GHz typ (VCE=1V).
: fT=22GHz typ (VCE=3V).
• Low operating voltage.
• High gain
: S21e2=14dB typ (f=2GHz).
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Electrical Characteristics at Ta=25°C
Conditions
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Reverse Transfer Capacitance
Forward Transfer Gain
Noise Figure
Marking : NF
Symbol
ICBO
IEBO
hFE
fT1
fT2
Cre
S21e21
S21e22
NF
Conditions
VCB=5V, IE=0
VEB=1V, IC=0
VCE=3V, IC=15mA
VCE=1V, IC=5mA
VCE=3V, IC=15mA
VCB=1V, f=1MHz
VCE=1V, IC=5mA, f=2GHz
VCE=3V, IC=15mA, f=2GHz
VCE=1V, IC=5mA, f=2GHz
Ratings
9
3.5
2
35
120
150
--55 to +150
Unit
V
V
V
mA
mW
°C
°C
Ratings
min typ
80
14.5
18 22
0.18
9.5 11
14
1.2
max
1.0
1
160
Unit
µA
µA
GHz
GHz
pF
dB
dB
dB
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
31005AB TS IM TB-00000431 No.8143-1/15
1 page  
S Parameters (Common emitter)
VCE=1V, IC=5mA, ZO=50Ω
Freq(MHz)
S11
∠S11
200
0.886
--19.6
400
0.809
--41.9
600
0.740
--61.1
800
0.651
--79.0
1000
0.563
--99.0
1200
0.498
--115.3
1400
0.462
--127.2
1600
0.429
--140.6
1800
0.408
--151.5
2000
0.397
--161.6
2200
0.389
--170.0
2400
0.386
--178.9
2600
0.383
173.8
2800
0.386
167.1
3000
0.388
160.7
3200
0.395
154.9
3400
0.402
149.4
3600
0.410
144.1
3800
0.418
139.4
4000
0.427
134.8
4200
0.436
130.4
4400
0.445
126.3
4600
0.454
122.4
4800
0.463
118.6
5000
0.472
114.9
5200
0.481
111.4
5400
0.490
108.0
5600
0.498
104.8
5800
0.504
101.5
6000
0.511
98.4
2SC6023
S21
9.563
9.578
8.407
7.402
6.862
6.118
5.350
4.833
4.359
3.961
3.610
3.336
3.085
2.868
2.688
2.527
2.387
2.262
2.148
2.042
1.947
1.861
1.780
1.707
1.638
1.573
1.514
1.458
1.406
1.359
∠S21
159.2
140.5
127.4
115.0
103.9
95.0
88.4
82.0
76.5
71.5
67.1
62.6
58.6
54.7
51.1
47.5
43.9
40.5
37.1
33.8
30.6
27.4
24.3
21.3
18.3
15.4
12.6
9.8
7.2
4.5
S12
0.025
0.050
0.069
0.083
0.092
0.098
0.105
0.111
0.116
0.121
0.126
0.131
0.136
0.141
0.148
0.154
0.160
0.166
0.173
0.180
0.186
0.193
0.200
0.207
0.214
0.221
0.228
0.236
0.243
0.251
∠S12
82.2
70.9
61.5
54.0
49.4
46.1
43.8
42.4
41.3
40.6
39.9
39.7
39.4
39.1
38.9
38.7
38.0
37.7
37.2
36.6
35.8
35.1
34.1
33.1
32.3
31.2
30.2
29.1
28.0
26.9
S22
0.952
0.878
0.778
0.688
0.609
0.551
0.508
0.474
0.449
0.431
0.418
0.407
0.400
0.396
0.396
0.398
0.400
0.404
0.408
0.414
0.419
0.426
0.432
0.439
0.447
0.453
0.461
0.468
0.475
0.482
∠S22
--19.4
--37.7
--53.8
--66.5
--76.5
--84.9
--91.9
--98.0
--103.5
--108.7
--112.8
--117.2
--121.0
--124.5
--127.6
--130.9
--133.9
--137.0
--139.9
--142.8
--145.6
--148.2
--150.8
--153.3
--155.9
--158.5
--160.9
--163.2
--165.4
--167.5
No.8143-5/15
5 Page 
S Parameters (Common emitter)
VCE=3V, IC=10mA, ZO=50Ω
Freq(MHz)
S11
∠S11
200
0.821
--23.6
400
0.727
--50.3
600
0.624
--74.0
800
0.528
--93.7
1000
0.450
--112.1
1200
0.401
--127.3
1400
0.372
--139.4
1600
0.351
--151.3
1800
0.339
--161.6
2000
0.333
--171.0
2200
0.331
--179.5
2400
0.332
172.5
2600
0.332
165.5
2800
0.337
159.1
3000
0.342
153.3
3200
0.349
147.9
3400
0.357
142.8
3600
0.366
138.1
3800
0.376
133.5
4000
0.386
129.4
4200
0.395
125.3
4400
0.404
121.4
4600
0.413
117.9
4800
0.422
114.3
5000
0.430
110.9
5200
0.439
107.7
5400
0.447
104.5
5600
0.455
101.4
5800
0.461
98.4
6000
0.468
95.5
S21
16.540
15.780
13.461
11.167
9.502
8.122
7.029
6.206
5.540
4.999
4.545
4.175
3.851
3.578
3.341
3.140
2.962
2.803
2.658
2.528
2.408
2.300
2.200
2.108
2.022
1.943
1.869
1.801
1.738
1.680
2SC6023
∠S21
155.6
134.6
118.6
106.3
96.7
89.3
83.7
78.5
73.9
69.6
65.7
61.9
58.3
54.9
51.7
48.4
45.1
42.0
38.9
35.8
32.8
29.8
26.9
24.0
21.1
18.4
15.7
13.0
10.4
7.8
S12
0.018
0.036
0.049
0.059
0.067
0.075
0.083
0.090
0.097
0.104
0.112
0.120
0.127
0.134
0.142
0.150
0.158
0.166
0.174
0.182
0.190
0.198
0.205
0.213
0.221
0.229
0.236
0.244
0.252
0.259
∠S12
82.5
73.8
67.3
61.9
59.1
57.3
56.5
55.8
55.2
54.5
53.5
53.2
52.6
51.9
51.0
50.0
49.0
48.1
46.9
45.6
44.5
43.2
41.9
40.5
39.0
37.8
36.3
34.9
33.5
32.0
S22
0.929
0.832
0.714
0.613
0.536
0.481
0.442
0.414
0.393
0.378
0.368
0.361
0.356
0.354
0.355
0.358
0.362
0.367
0.373
0.378
0.385
0.392
0.399
0.407
0.414
0.422
0.429
0.436
0.443
0.451
∠S22
--21.2
--40.5
--56.1
--67.7
--76.4
--83.4
--89.4
--94.6
--99.4
--103.8
--107.7
--111.7
--115.1
--118.2
--121.2
--124.4
--127.4
--130.5
--133.4
--136.3
--139.1
--141.8
--144.5
--147.1
--149.5
--152.1
--154.5
--156.8
--158.9
--161.1
No.8143-11/15
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet 2SC6023.PDF ] | |
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