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NEC - SWITCHING N- AND P-CHANNEL POWER MOS FET

Numéro de référence UPA2756GR
Description SWITCHING N- AND P-CHANNEL POWER MOS FET
Fabricant NEC 
Logo NEC 





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UPA2756GR fiche technique
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA2756GR
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The µ PA2756GR is Dual N-channel MOS Field Effect
Transistor designed for switching applications.
FEATURES
Low on-state resistance
RDS(on)1 = 105 mMAX. (VGS = 10 V, ID = 2.0 A)
RDS(on)2 = 150 mMAX. (VGS = 4.0 V, ID = 2.0 A)
Low Ciss: Ciss = 260 pF TYP.
Built-in G-S protection diode against ESD
Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
µ PA2756GR
PACKAGE
Power SOP8
PACKAGE DRAWING (Unit: mm)
85
14
5.37 MAX.
1 : Source 1
2 : Gate 1
7, 8: Drain 1
3 : Source 2
4 : Gate 2
5, 6: Drain 2
6.0 ±0.3
4.4
0.8
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
0.5 ±0.2
0.10
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
60
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) Note1
Drain Current (pulse) Note2
Total Power Dissipation (1 unit) Note1
Total Power Dissipation (2 units) Note1
VGSS
ID(DC)
ID(pulse)
PT1
PT2
±20
±4.0
±16
1.6
2.0
Channel Temperature
Tch 150
Storage Temperature
Single Avalanche Current Note3
Single Avalanche Energy Note3
Repetitive Avalanche Energy Note4
Tstg 55 to +150
IAS 4.0
EAS 1.6
EAR 1.6
V
V
A
A
W
W
°C
°C
A
mJ
mJ
EQUIVALENT CIRCUIT
Drain 1
Drain 2
Gate 1
Body
Diode Gate 2
Body
Diode
Gate
Protection Source 1
Diode
Gate
Protection Source 2
Diode
Notes 1. Mounted on ceramic substrate of 2000 mm2 x 2.2 mm
2. PW 10 µs, Duty Cycle 1%
3. Starting Tch = 25°C, VDD = 30 V, RG = 25 , VGS = 20 0 V
4. IAR 4.0 A, Tch 150°C
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G17407EJ1V0DS00 (1st edition)
Date Published January 2005 NS CP(K)
Printed in Japan
2005

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